Issued Patents 2021
Showing 76–100 of 134 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11038097 | Magnetic structures with tapered edges | Bruce B. Doris, Oscar van der Straten, Praneet Adusumilli | 2021-06-15 |
| 11031297 | Multiple gate length vertical field-effect-transistors | Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi | 2021-06-08 |
| 11024740 | Asymmetric channel threshold voltage | Choonghyun Lee, Takashi Ando, Jingyun Zhang, Pouya Hashemi | 2021-06-01 |
| 11024670 | Forming an MRAM device over a transistor | Ruilong Xie, Heng Wu, Lan Yu | 2021-06-01 |
| 11018254 | Fabrication of vertical fin transistor with multiple threshold voltages | Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi | 2021-05-25 |
| 11018188 | Three-dimensional stackable multi-layer cross-point memory with bipolar junction transistor selectors | Bahman Hekmatshoartabari, Tak H. Ning | 2021-05-25 |
| 11011697 | Faceted sidewall magnetic tunnel junction structure | Oscar van der Straten, Praneet Adusumilli | 2021-05-18 |
| 11011528 | Asymmetric gate edge spacing for SRAM structures | Ruilong Xie, Chun-Chen Yeh, Chen Zhang | 2021-05-18 |
| 10998419 | Single crystalline extrinsic bases for bipolar junction structures | Pouya Hashemi, Tak H. Ning, Jeng-Bang Yau | 2021-05-04 |
| 10998444 | Stacked FinFET masked-programmable ROM | Karthik Balakrishnan, Tak H. Ning, Bahman Hekmatshoartabari | 2021-05-04 |
| 10998441 | Strained silicon complementary metal oxide semiconductor including a silicon containing tensile n-type fin field effect transistor and silicon containing compressive p-type fin field effect transistor formed using a dual relaxed substrate | Kangguo Cheng, Nicolas Loubet, Xin Miao | 2021-05-04 |
| 10998233 | Mechanically stable complementary field effect transistors | Ruilong Xie, Chun-Chen Yeh, Chen Zhang | 2021-05-04 |
| 10991711 | Stacked-nanosheet semiconductor structures | Bahman Hekmatshoartabari, Karthik Balakrishnan, Jeng-Bang Yau | 2021-04-27 |
| 10991823 | Fabrication of vertical fin transistor with multiple threshold voltages | Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi | 2021-04-27 |
| 10978356 | Tri-layer STI liner for nanosheet leakage control | Choonghyun Lee, Xin Miao, Jingyun Zhang | 2021-04-13 |
| 10971675 | Dual function magnetic tunnel junction pillar encapsulation | Son V. Nguyen, Donald F. Canaperi | 2021-04-06 |
| 10964709 | Stacked FinFET EEPROM | Karthik Balakrishnan, Pouya Hashemi, Tak H. Ning | 2021-03-30 |
| 10957642 | Resistance tunable fuse structure formed by embedded thin metal layers | Chih-Chao Yang, Miaomiao Wang, Donald F. Canaperi | 2021-03-23 |
| 10957797 | Series connected stacked vertical transistors for high voltage applications | Bahman Hekmatshoartabari, Tak H. Ning | 2021-03-23 |
| 10957761 | Electrical isolation for nanosheet transistor devices | Chun-Chen Yeh, Veeraraghavan S. Basker, Junli Wang | 2021-03-23 |
| 10957707 | Vertical transistor based radiation dosimeter | Jeng-Bang Yau, Bahman Hekmatshoartabari, Karthik Balakrishnan | 2021-03-23 |
| 10957694 | Epitaxial oxide fin segments to prevent strained semiconductor fin end relaxation | Karthik Balakrishnan, Keith E. Fogel, Sivananda K. Kanakasabapathy | 2021-03-23 |
| 10950549 | ILD gap fill for memory device stack array | Soon-Cheon Seo, Injo Ok, Choonghyun Lee | 2021-03-16 |
| 10943903 | Asymmetric threshold voltage VTFET with intrinsic dual channel epitaxy | Choonghyun Lee, Jingyun Zhang, Takashi Ando, Pouya Hashemi | 2021-03-09 |
| 10944012 | Area-efficient inverter using stacked vertical transistors | Kangguo Cheng, Karthik Balakrishnan, Pouya Hashemi | 2021-03-09 |