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Cell circuits formed in circuit cells employing offset gate cut areas in a non-active area for routing transistor gate cross-connections |
Stanley Seungchul Song, John Jianhong Zhu, Da Yang |
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Field effect transistor (FET) comprising channels with silicon germanium (SiGe) |
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| 11121075 |
Hybrid metallization interconnects for power distribution and signaling |
Mustafa Badaroglu |
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Shunt power rail with short line effect |
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| 10892364 |
Dielectric isolated fin with improved fin profile |
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| 10886385 |
Semiconductor structures having increased channel strain using fin release in gate regions |
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