Issued Patents 2021
Showing 1–13 of 13 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11101367 | Contact-first field-effect transistors | Terence B. Hook, Myung-Hee Na, Andreas Scholze | 2021-08-24 |
| 11063216 | Confined phase change memory with double air gap | Injo Ok, Wei Wang | 2021-07-13 |
| 11038055 | Method and structure of improving contact resistance for passive and long channel devices | Injo Ok, Soon-Cheon Seo, Charan V. Surisetty | 2021-06-15 |
| 11011429 | Minimize middle-of-line contact line shorts | Injo Ok, Soon-Cheon Seo, Charan V. Surisetty | 2021-05-18 |
| 11004750 | Middle of the line contact formation | Ruilong Xie, Chanro Park, Nicolas Loubet | 2021-05-11 |
| 10998234 | Nanosheet bottom isolation and source or drain epitaxial growth | Ruilong Xie, Veeraraghavan S. Basker, Nicolas Loubet | 2021-05-04 |
| 10985260 | Trench silicide contacts with high selectivity process | Andrew M. Greene, Ruilong Xie | 2021-04-20 |
| 10978343 | Interconnect structure having fully aligned vias | Chanro Park, Nicholas Anthony Lanzillo, Christopher J. Penny, Lawrence A. Clevenger | 2021-04-13 |
| 10937961 | Structure and method to form bi-layer composite phase-change-memory cell | Injo Ok, Myung-Hee Na, Nicole Saulnier | 2021-03-02 |
| 10937861 | Semiconductor structures including middle-of-line (MOL) capacitance reduction for self-aligned contact in gate stack | Injo Ok, Soon-Cheon Seo, Charan V. V. S. Surisetty | 2021-03-02 |
| 10923471 | Minimizing shorting between FinFET epitaxial regions | Kangguo Cheng, Alexander Reznicek, Charan V. V. S. Surisetty | 2021-02-16 |
| 10916478 | Methods of performing fin cut etch processes for FinFET semiconductor devices | Lei Zhuang, Lars Liebmann, Ruilong Xie, Terence B. Hook | 2021-02-09 |
| 10896972 | Self-aligned contact for vertical field effect transistor | Brent A. Anderson, Steven R. Bentley, Su Chen Fan, Junli Wang, Ruilong Xie | 2021-01-19 |