Issued Patents 2021
Showing 1–25 of 134 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11205698 | Multiple work function nanosheet transistors with inner spacer modulation | Takashi Ando, Ruilong Xie, Pouya Hashemi | 2021-12-21 |
| 11205728 | Vertical field effect transistor with reduced parasitic capacitance | Choonghyun Lee, Xin Miao, Jingyun Zhang | 2021-12-21 |
| 11201092 | Gate channel length control in VFET | Injo Ok, Choonghyun Lee, Soon-Cheon Seo | 2021-12-14 |
| 11201241 | Vertical field effect transistor and method of manufacturing a vertical field effect transistor | Choonghyun Lee, Xin Miao, Richard Southwick | 2021-12-14 |
| 11201153 | Stacked field effect transistor with wrap-around contacts | Ruilong Xie, Chun-Chen Yeh, Dechao Guo | 2021-12-14 |
| 11201242 | Structure to enable titanium contact liner on pFET source/drain regions | Veeraraghavan S. Basker, Keith E. Fogel, Nicole S. Munro | 2021-12-14 |
| 11196000 | Low forming voltage non-volatile memory (NVM) | Youngseok Kim, Injo Ok, Soon-Cheon Seo | 2021-12-07 |
| 11189725 | VTFET with cell height constraints | Heng Wu, Ruilong Xie, Lan Yu, Junli Wang | 2021-11-30 |
| 11189661 | FinFET 2T2R RRAM | Takashi Ando, Pouya Hashemi, Choonghyun Lee, Jingyun Zhang | 2021-11-30 |
| 11187672 | Superhydrophobic electrode and biosensing device using the same | Ali Afzali-Ardakani, Karthik Balakrishnan, Stephen W. Bedell, Pouya Hashemi, Bahman Hekmatshoartabari | 2021-11-30 |
| 11189701 | Bipolar junction transistor with vertically integrated resistor | Bahman Hekmatshoartabari, Karthik Balakrishnan | 2021-11-30 |
| 11189712 | Formation of vertical transport field-effect transistor structure having increased effective width | Ruilong Xie, Takashi Ando, Pouya Hashemi | 2021-11-30 |
| 11183632 | Self-aligned edge passivation for robust resistive random access memory connection | Takashi Ando, Ruilong Xie, Pouya Hashemi | 2021-11-23 |
| 11183558 | Nanosheet transistor having partially self-limiting bottom isolation extending into the substrate and under the source/drain and gate regions | Chun-Chen Yeh, Veeraraghavan S. Basker, Junli Wang | 2021-11-23 |
| 11177225 | Semiconductor device including physical unclonable function | Bahman Hekmatshoartabari, Takashi Ando, Nanbo Gong | 2021-11-16 |
| 11177258 | Stacked nanosheet CFET with gate all around structure | Ruilong Xie, Heng Wu, Lan Yu | 2021-11-16 |
| 11177366 | Gate induced drain leakage reduction in FinFETs | Takashi Ando, Jingyun Zhang, Ruilong Xie | 2021-11-16 |
| 11177372 | Stacked vertical transport field effect transistor electrically erasable programmable read only memory (EEPROM) devices | Karthik Balakrishnan, Jeng-Bang Yau, Tak H. Ning | 2021-11-16 |
| 11177370 | Vertical field effect transistor with self-aligned source and drain top junction | Ruilong Xie, Chun-Chen Yeh, Chen Zhang | 2021-11-16 |
| 11164907 | Resistive random access memory integrated with stacked vertical transistors | Karthik Balakrishnan, Bahman Hekmatshoartabari, Takashi Ando | 2021-11-02 |
| 11165017 | Replacement bottom electrode structure process to form misalignment tolerate MRAM with high yield | Pouya Hashemi, Takashi Ando, Dimitri Houssameddine, Jingyun Zhang, Choonghyun Lee | 2021-11-02 |
| 11164792 | Complementary field-effect transistors | Ruilong Xie, Jingyun Zhang, Junli Wang | 2021-11-02 |
| 11164960 | Transistor having in-situ doped nanosheets with gradient doped channel regions | Jingyun Zhang, Ruilong Xie | 2021-11-02 |
| 11164782 | Self-aligned gate contact compatible cross couple contact formation | Ruilong Xie, Balasubramanian S. Pranatharthi Haran, Dechao Guo, Nicolas Loubet | 2021-11-02 |
| 11164793 | Reduced source/drain coupling for CFET | Ruilong Xie, Chanro Park, Chun-Chen Yeh | 2021-11-02 |