Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Vertical FET with asymmetric threshold voltage and channel thicknesses

Vertical FET with asymmetric threshold voltage and channel thicknesses

US Patent 11158715 · Granted Oct 26, 2021

Estimated economic value: $2,874,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Dielectric tuning of negative capacitance in dual channel field effect transisto2025
Vertically stacked cascode bipolar junction transistor (BJT) pair sensor2025
Stacked complementary field effect transistors2025
Power distribution network with backside power rail2025
Solid-state switch2025
Tunnel field effect transistor devices2025
Forksheet transistor with dual depth late cell boundary cut2025
Hybrid stacked field effect transistors2025
Gate induced drain leakage reduction in FinFETs2025
Gate induced drain leakage reduction in FinFETs2025
Textured cobalt aluminum/magnesium-aluminum-oxide pedestal for memory devices2025
Metal hard mask integration for active device structures2025