Issued Patents 2021
Showing 26–37 of 37 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10957601 | Self-aligned fin recesses in nanosheet field effect transistors | Kangguo Cheng, Wenyu Xu, Xin Miao | 2021-03-23 |
| 10957599 | Integrating extra gate VFET with single gate VFET | Kangguo Cheng, Junli Wang, Peng Xu | 2021-03-23 |
| 10937792 | Dense vertical field effect transistor structure | Peng Xu, Kangguo Cheng, Juntao Li | 2021-03-02 |
| 10937860 | Nanosheet transistor bottom isolation | Kangguo Cheng, Yi Song, Lijuan Zou | 2021-03-02 |
| 10937703 | Field-effect transistor having dual channels | Kangguo Cheng, Juntao Li, Peng Xu | 2021-03-02 |
| 10930756 | Gate spacer and inner spacer formation for nanosheet transistors having relatively small space between gates | Kangguo Cheng, Nicolas Loubet, Xin Miao, Wenyu Xu, Chen Zhang | 2021-02-23 |
| 10930734 | Nanosheet FET bottom isolation | Ruqiang Bao, Kangguo Cheng, Zheng Xu | 2021-02-23 |
| 10916154 | Language learning and speech enhancement through natural language processing | Mahmoud Amin, Lawrence A. Clevenger, Leigh Anne H. Clevenger, Christopher J. Penny, Krishna R. Tunga +1 more | 2021-02-09 |
| 10896816 | Silicon residue removal in nanosheet transistors | Thamarai S. Devarajan, Nicolas Loubet, Binglin Miao, Muthumanickam Sankarapandian, Charan V. Surisetty +2 more | 2021-01-19 |
| 10890560 | Forming nanoscale pores in a semiconductor structure utilizing nanotubes as a sacrificial template | Juntao Li, Kangguo Cheng, Peng Xu | 2021-01-12 |
| 10892328 | Source/drain extension regions and air spacers for nanosheet field-effect transistor structures | Yi Song, Kangguo Cheng, Chi-Chun Liu | 2021-01-12 |
| 10886367 | Forming FinFET with reduced variability | Kangguo Cheng, Juntao Li, Dexin Kong | 2021-01-05 |