| RE48616 |
Isolation region fabrication for replacement gate processing |
Brent A. Anderson |
2021-06-29 |
| 11024546 |
Vertical field effect transistors |
Brent A. Anderson |
2021-06-01 |
| 10957799 |
Transistor channel having vertically stacked nanosheets coupled by fin-shaped bridge regions |
Ruilong Xie, Julien Frougier, Chanro Park, Yi Qi, Kangguo Cheng +1 more |
2021-03-23 |
| 10943831 |
Vertical field effect transistors |
Brent A. Anderson |
2021-03-09 |
| 10909443 |
Neuromorphic circuit structure and method to form same |
Siva P. Adusumilli, Ruilong Xie, Julien Frougier |
2021-02-02 |
| 10903369 |
Transistor channel having vertically stacked nanosheets coupled by fin-shaped bridge regions |
Ruilong Xie, Julien Frougier, Chanro Park, Yi Qi, Kangguo Cheng +1 more |
2021-01-26 |
| 10903361 |
Fabrication of a vertical field effect transistor device with a modified vertical fin geometry |
Brent A. Anderson |
2021-01-26 |
| 10896857 |
Vertical field effect transistors |
Brent A. Anderson |
2021-01-19 |
