Issued Patents 2021
Showing 26–50 of 100 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11101322 | RRAM cells in crossbar array architecture | Dexin Kong, Takashi Ando, Kangguo Cheng | 2021-08-24 |
| 11101182 | Nanosheet transistors with different gate dielectrics and workfunction metals | Kangguo Cheng, Choonghyun Lee, Peng Xu | 2021-08-24 |
| 11092551 | Staircase surface-enhanced raman scattering substrate | Kangguo Cheng, Chanro Park, Ruilong Xie | 2021-08-17 |
| 11094630 | Formation of semiconductor devices including electrically programmable fuses | Chih-Chao Yang | 2021-08-17 |
| 11088279 | Channel strain formation in vertical transport FETS with dummy stressor materials | Choonghyun Lee, Kangguo Cheng, Shogo Mochizuki | 2021-08-10 |
| 11081546 | Isolation structure for stacked vertical transistors | Kangguo Cheng, Chen Zhang, Zhenxing Bi | 2021-08-03 |
| 11081172 | On-chip security key with phase change memory | Kangguo Cheng, Carl Radens, Ruilong Xie | 2021-08-03 |
| 11069677 | Semiconductor device comprising metal-insulator-metal (MIM) capacitor | Chanro Park, Ruilong Xie, Kangguo Cheng | 2021-07-20 |
| 11069680 | FinFET-based integrated circuits with reduced parasitic capacitance | Ruilong Xie, Kangguo Cheng, Chanro Park | 2021-07-20 |
| 11069577 | Nanosheet transistors with different gate dielectrics and workfunction metals | Kangguo Cheng, Choonghyun Lee, Peng Xu | 2021-07-20 |
| 11063147 | Forming bottom source and drain extension on vertical transport FET (VTFET) | Shogo Mochizuki, Kangguo Cheng, Choonghyun Lee | 2021-07-13 |
| 11063129 | Self-limiting fin spike removal | Kangguo Cheng, Choonghyun Lee, Peng Xu | 2021-07-13 |
| 11049953 | Nanosheet transistor | Kangguo Cheng, Heng Wu, Peng Xu | 2021-06-29 |
| 11049940 | Method and structure for forming silicon germanium finFET | Peng Xu, Kangguo Cheng, Heng Wu | 2021-06-29 |
| 11043493 | Stacked nanosheet complementary metal oxide semiconductor field effect transistor devices | Zhenxing Bi, Kangguo Cheng | 2021-06-22 |
| 11043634 | Confining filament at pillar center for memory devices | Dexin Kong, Takashi Ando, Kangguo Cheng | 2021-06-22 |
| 11043451 | Electrical fuse and/or resistor structures | Veeraraghavan S. Basker, Kangguo Cheng, Ali Khakifirooz | 2021-06-22 |
| 11037725 | Manufacturing method for inductor with ferromagnetic cores | Kangguo Cheng, Geng Wang, Qintao Zhang | 2021-06-15 |
| 11038106 | Phase change memory cell with a metal layer | Carl Radens, Kangguo Cheng, Ruilong Xie | 2021-06-15 |
| 11031485 | Transistor with airgap spacer | Kangguo Cheng, Ruilong Xie, Chanro Park | 2021-06-08 |
| 11024547 | Method and structure for forming vertical transistors with shared gates and separate gates | Zhenxing Bi, Kangguo Cheng, Peng Xu | 2021-06-01 |
| 11017999 | Method and structure for forming bulk FinFET with uniform channel height | Kangguo Cheng, Xin Miao | 2021-05-25 |
| 11011622 | Closely packed vertical transistors with reduced contact resistance | Zhenxing Bi, Kangguo Cheng, Peng Xu | 2021-05-18 |
| 11011432 | Vertical silicon/silicon-germanium transistors with multiple threshold voltages | Zhenxing Bi, Kangguo Cheng, Peng Xu | 2021-05-18 |
| 11011626 | Fin field-effect transistor with reduced parasitic capacitance and reduced variability | Kangguo Cheng, Ruilong Xie, Chanro Park | 2021-05-18 |