Issued Patents 2021
Showing 51–75 of 100 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11011704 | Forming RRAM cell structure with filament confinement | Dexin Kong, Kangguo Cheng, Takashi Ando | 2021-05-18 |
| 11004751 | Vertical transistor having reduced edge fin variation | Kangguo Cheng, Dexin Kong, Zhenxing Bi | 2021-05-11 |
| 10998424 | Vertical metal-air transistor | Kangguo Cheng, Ruilong Xie, Chanro Park | 2021-05-04 |
| 10998229 | Transistor with improved self-aligned contact | Kangguo Cheng, Zhenxing Bi, Dexin Kong | 2021-05-04 |
| 10991584 | Methods and structures for cutting lines or spaces in a tight pitch structure | Peng Xu, Kangguo Cheng, Choonghyun Lee | 2021-04-27 |
| 10985274 | Reduction of top source/drain external resistance and parasitic capacitance in vertical transistors | Choonghyun Lee, Kangguo Cheng, Shogo Mochizuki | 2021-04-20 |
| 10985315 | Resistive random-access memory | Kangguo Cheng, Choonghyun Lee, Peng Xu | 2021-04-20 |
| 10985279 | Source and drain epitaxy and isolation for gate structures | Kangguo Cheng, Peng Xu, Zhenxing Bi | 2021-04-20 |
| 10978572 | Self-aligned contact with metal-insulator transition materials | Choonghyun Lee, Kangguo Cheng, Peng Xu | 2021-04-13 |
| 10978574 | Floating gate prevention and capacitance reduction in semiconductor devices | Ruilong Xie, Kangguo Cheng, Chanro Park | 2021-04-13 |
| 10978571 | Self-aligned contact with metal-insulator transition materials | Choonghyun Lee, Kangguo Cheng, Peng Xu | 2021-04-13 |
| 10971549 | Semiconductor memory device having a vertical active region | Kangguo Cheng, Takashi Ando, Dexin Kong | 2021-04-06 |
| 10971584 | Low contact resistance nanowire FETs | Peng Xu, Choonghyun Lee, Kangguo Cheng | 2021-04-06 |
| 10961120 | Nanoparticle structure and process for manufacture | Qing Cao, Kangguo Cheng | 2021-03-30 |
| 10957693 | Vertical transistors with different gate lengths | Xin Miao, Chen Zhang, Kangguo Cheng | 2021-03-23 |
| 10957698 | Reduction of multi-threshold voltage patterning damage in nanosheet device structure | Choonghyun Lee, Kangguo Cheng, Shogo Mochizuki | 2021-03-23 |
| 10957643 | Formation of semiconductor devices including electrically programmable fuses | Chih-Chao Yang | 2021-03-23 |
| 10950506 | Forming single and double diffusion breaks | Ruilong Xie, Kangguo Cheng, Junli Wang | 2021-03-16 |
| 10950711 | Fabrication of vertical field effect transistor structure with strained channels | Kangguo Cheng | 2021-03-16 |
| 10950459 | Back end of line structures with metal lines with alternating patterning and metallization schemes | Ruilong Xie, Chanro Park, Chih-Chao Yang, Kangguo Cheng | 2021-03-16 |
| 10943835 | Fabrication of silicon germanium channel and silicon/silicon germanium dual channel field-effect transistors | Choonghyun Lee, Kangguo Cheng, Shogo Mochizuki | 2021-03-09 |
| 10943902 | Forming strained channels for CMOS device fabrication | Kangguo Cheng, John G. Gaudiello | 2021-03-09 |
| 10943816 | Mask removal for tight-pitched nanostructures | Kangguo Cheng, Choonghyun Lee | 2021-03-09 |
| 10937792 | Dense vertical field effect transistor structure | Peng Xu, Kangguo Cheng, Zhenxing Bi | 2021-03-02 |
| 10937866 | Method and structure for forming silicon germanium FinFET | Peng Xu, Kangguo Cheng, Heng Wu | 2021-03-02 |