Issued Patents 2021
Showing 76–100 of 100 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10937703 | Field-effect transistor having dual channels | Zhenxing Bi, Kangguo Cheng, Peng Xu | 2021-03-02 |
| 10935516 | Ion-sensitive field-effect transistor formed with alternating dielectric stack to enhance sensitivity | Kangguo Cheng, Chanro Park, Ruilong Xie | 2021-03-02 |
| 10930510 | Semiconductor device with improved contact resistance and via connectivity | Chanro Park, Kangguo Cheng, Ruilong Xie | 2021-02-23 |
| 10930760 | Fabrication of vertical field effect transistor structure with strained channels | Kangguo Cheng | 2021-02-23 |
| 10930759 | Fabrication of vertical field effect transistor structure with strained channels | Kangguo Cheng | 2021-02-23 |
| 10930758 | Space deposition between source/drain and sacrificial layers | Shogo Mochizuki, Kangguo Cheng, Choonghyun Lee | 2021-02-23 |
| 10930568 | Method and structure to improve overlay margin of non-self-aligned contact in metallization layer | Ruilong Xie, Kangguo Cheng, Chanro Park | 2021-02-23 |
| 10930563 | Formation of stacked nanosheet semiconductor devices | Kangguo Cheng, Heng Wu, Peng Xu | 2021-02-23 |
| 10916633 | Silicon germanium FinFET with low gate induced drain leakage current | Shogo Mochizuki, Kangguo Cheng, Choonghyun Lee | 2021-02-09 |
| 10916657 | Tensile strain in NFET channel | Peng Xu, Kangguo Cheng, Heng Wu | 2021-02-09 |
| 10916649 | Vertical field effect transistor with reduced external resistance | Kangguo Cheng, Choonghyun Lee, Peng Xu | 2021-02-09 |
| 10916638 | Vertical fin field effect transistor devices with reduced top source/drain variability and lower resistance | Kangguo Cheng, Shogo Mochizuki, Choonghyun Lee | 2021-02-09 |
| 10910494 | Method and structure for forming vertical transistors with various gate lengths | Kangguo Cheng, Shogo Mochizuki, Choonghyun Lee | 2021-02-02 |
| 10900906 | Surface enhanced Raman scattering substrate | Kangguo Cheng, Ruilong Xie, Chanro Park | 2021-01-26 |
| 10903421 | Controlling filament formation and location in a resistive random-access memory device | Dexin Kong, Takashi Ando, Kangguo Cheng | 2021-01-26 |
| 10903339 | Vertical transport FET devices having a sacrificial doped layer | Choonghyun Lee, Kangguo Cheng, Shogo Mochizuki | 2021-01-26 |
| 10903162 | Fuse element resistance enhancement by laser anneal and ion implantation | Liying Jiang, Chih-Chao Yang, Michael Rizzolo, Yi Song | 2021-01-26 |
| 10896845 | Airgap vertical transistor without structural collapse | Kangguo Cheng, Chanro Park, Ruilong Xie | 2021-01-19 |
| 10890560 | Forming nanoscale pores in a semiconductor structure utilizing nanotubes as a sacrificial template | Kangguo Cheng, Peng Xu, Zhenxing Bi | 2021-01-12 |
| 10892368 | Nanosheet transistor having abrupt junctions between the channel nanosheets and the source/drain extension regions | Choonghyun Lee, Kangguo Cheng, Shogo Mochizuki | 2021-01-12 |
| 10892325 | Vertical field effect transistor with reduced gate to source/drain capacitance | Kangguo Cheng, Choonghyun Lee, Peng Xu | 2021-01-12 |
| 10892324 | Vertical field effect transistor with reduced gate to source/drain capacitance | Kangguo Cheng, Choonghyun Lee, Peng Xu | 2021-01-12 |
| 10886284 | Anti-fuse with reduced programming voltage | Kangguo Cheng, Chengwen Pei, Geng Wang | 2021-01-05 |
| 10886367 | Forming FinFET with reduced variability | Kangguo Cheng, Zhenxing Bi, Dexin Kong | 2021-01-05 |
| 10886169 | Airgap formation in BEOL interconnect structure using sidewall image transfer | Kangguo Cheng, Ekmini Anuja De Silva, Yi Song, Peng Xu | 2021-01-05 |