Issued Patents 2021
Showing 26–50 of 58 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11049935 | Non-planar field effect transistor devices with low-resistance metallic gate structures | Kangguo Cheng, Chen Zhang, Wenyu Xu | 2021-06-29 |
| 11038015 | Non-planar field effect transistor devices with low-resistance metallic gate structures | Kangguo Cheng, Chen Zhang, Wenyu Xu | 2021-06-15 |
| 11024738 | Measurement of top contact resistance in vertical field-effect transistor devices | Zuoguang Liu, Richard Southwick, Chun Wing Yeung | 2021-06-01 |
| 11017999 | Method and structure for forming bulk FinFET with uniform channel height | Kangguo Cheng, Juntao Li | 2021-05-25 |
| 11011411 | Semiconductor wafer having integrated circuits with bottom local interconnects | Chen Zhang, Wenyu Xu, Kangguo Cheng | 2021-05-18 |
| 11004933 | Field effect transistor structures | Josephine B. Chang, Bruce B. Doris, Michael A. Guillorn, Isaac Lauer | 2021-05-11 |
| 11004678 | Atomic layer deposition sealing integration for nanosheet complementary metal oxide semiconductor with replacement spacer | Bruce B. Doris, Michael A. Guillorn, Isaac Lauer | 2021-05-11 |
| 10998441 | Strained silicon complementary metal oxide semiconductor including a silicon containing tensile n-type fin field effect transistor and silicon containing compressive p-type fin field effect transistor formed using a dual relaxed substrate | Kangguo Cheng, Nicolas Loubet, Alexander Reznicek | 2021-05-04 |
| 10991798 | Replacement sacrificial nanosheets having improved etch selectivity | Wenyu Xu, Chen Zhang, Kangguo Cheng | 2021-04-27 |
| 10985161 | Single diffusion break isolation for gate-all-around field-effect transistor devices | Wenyu Xu, Chen Zhang, Kangguo Cheng | 2021-04-20 |
| 10978356 | Tri-layer STI liner for nanosheet leakage control | Choonghyun Lee, Alexander Reznicek, Jingyun Zhang | 2021-04-13 |
| 10971522 | High mobility complementary metal-oxide-semiconductor (CMOS) devices with fins on insulator | Chen Zhang, Kangguo Cheng, Wenyu Xu | 2021-04-06 |
| 10964602 | Fabrication of a pair of vertical fin field effect transistors having a merged top source/drain | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2021-03-30 |
| 10964601 | Fabrication of a pair of vertical fin field effect transistors having a merged top source/drain | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2021-03-30 |
| 10957693 | Vertical transistors with different gate lengths | Chen Zhang, Kangguo Cheng, Juntao Li | 2021-03-23 |
| 10957798 | Nanosheet transistors with transverse strained channel regions | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2021-03-23 |
| 10957783 | Fin cut etch process for vertical transistor devices | Wenyu Xu, Chen Zhang, Kangguo Cheng | 2021-03-23 |
| 10957601 | Self-aligned fin recesses in nanosheet field effect transistors | Zhenxing Bi, Kangguo Cheng, Wenyu Xu | 2021-03-23 |
| 10944013 | Self-aligned source/drain contact for vertical field effect transistor | Wenyu Xu, Chen Zhang, Kangguo Cheng | 2021-03-09 |
| 10937862 | Nanosheet substrate isolated source/drain epitaxy via airgap | Alexander Reznicek, Choonghyun Lee, Jingyun Zhang | 2021-03-02 |
| 10930778 | Vertical transistor devices with composite high-K and low-K spacers with a controlled top junction | Kangguo Cheng, Chen Zhang, Wenyu Xu | 2021-02-23 |
| 10930756 | Gate spacer and inner spacer formation for nanosheet transistors having relatively small space between gates | Zhenxing Bi, Kangguo Cheng, Nicolas Loubet, Wenyu Xu, Chen Zhang | 2021-02-23 |
| 10910482 | Nanosheet with changing SiGe percentage for SiGe lateral recess | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2021-02-02 |
| 10910372 | Fin field effect transistor devices with modified spacer and gate dielectric thicknesses | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2021-02-02 |
| 10903123 | High threshold voltage FET with the same fin height as regular threshold voltage vertical FET | Kangguo Cheng, Chen Zhang, Wenyu Xu | 2021-01-26 |