Issued Patents 2021
Showing 51–58 of 58 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10903358 | Vertical fin field effect transistor with reduced gate length variations | Chen Zhang, Kangguo Cheng, Wenyu Xu | 2021-01-26 |
| 10903337 | Air gap spacer with wrap-around etch stop layer under gate spacer | Chen Zhang, Kangguo Cheng, Wenyu Xu, Peng Xu | 2021-01-26 |
| 10903212 | Fin field effect transistor devices with modified spacer and gate dielectric thicknesses | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2021-01-26 |
| 10902910 | Phase change memory (PCM) with gradual reset characteristics | Kangguo Cheng, Chen Zhang, Wenyu Xu | 2021-01-26 |
| 10886384 | Fabrication of a vertical fin field effect transistor (vertical finFET) with a self-aligned gate and fin edges | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2021-01-05 |
| 10886403 | Close proximity and lateral resistance reduction for bottom source/drain epitaxy in vertical transistor devices | Alexander Reznicek, Shogo Mochizuki, Jingyun Zhang | 2021-01-05 |
| 10886391 | Single-electron transistor with wrap-around gate | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2021-01-05 |
| 10886368 | I/O device scheme for gate-all-around transistors | Jingyun Zhang, Alexander Reznicek, Choonghyun Lee | 2021-01-05 |