| 11177284 |
Ferroelectric memory devices containing a two-dimensional charge carrier gas channel and methods of making the same |
Peter Rabkin, Alan Kalitsov |
2021-11-16 |
| 11164883 |
Three-dimensional memory device containing aluminum-silicon word lines and methods of manufacturing the same |
Peter Rabkin, Jayavel Pachamuthu |
2021-11-02 |
| 11133297 |
Three-dimensional memory device having support-die-assisted source power distribution and method of making thereof |
Kwang Ho Kim, Fumiaki Toyama, Akio Nishida |
2021-09-28 |
| 11107516 |
Ferroelectric memory devices containing a two-dimensional charge carrier gas channel and methods of making the same |
Peter Rabkin |
2021-08-31 |
| 11101284 |
Three-dimensional memory device containing etch stop structures and methods of making the same |
Jayavel Pachamuthu, Hiroyuki Kinoshita, Makoto Dei, Junji Oh |
2021-08-24 |
| 11094653 |
Bonded assembly containing a dielectric bonding pattern definition layer and methods of forming the same |
Chen Wu, Peter Rabkin, Yangyin Chen |
2021-08-17 |
| 11088116 |
Bonded assembly containing horizontal and vertical bonding interfaces and methods of forming the same |
Chen Wu, Peter Rabkin |
2021-08-10 |
| 11074976 |
Temperature dependent impedance mitigation in non-volatile memory |
Peter Rabkin, Kwang Ho Kim |
2021-07-27 |
| 11037908 |
Bonded die assembly containing partially filled through-substrate via structures and methods for making the same |
Chen Wu, Peter Rabkin, Yangyin Chen |
2021-06-15 |
| 11031088 |
Hot-cold VTH mismatch using VREAD modulation |
Dae Wung Kang, Peter Rabkin |
2021-06-08 |
| 11004773 |
Porous barrier layer for improving reliability of through-substrate via structures and methods of forming the same |
Chen Wu, Peter Rabkin |
2021-05-11 |
| 11004518 |
Threshold voltage setting with boosting read scheme |
Kiyohiko Sakakibara, Hiroki Yabe, Ken Oowada |
2021-05-11 |
| 10991721 |
Three-dimensional memory device including liner free molybdenum word lines and methods of making the same |
Peter Rabkin, Raghuveer S. Makala |
2021-04-27 |
| 10957401 |
Boosting read scheme with back-gate bias |
Kiyohiko Sakakibara, Ippei Yasuda, Ken Oowada |
2021-03-23 |
| 10950311 |
Boosting read scheme with back-gate bias |
Kiyohiko Sakakibara, Ippei Yasuda, Ken Oowada |
2021-03-16 |
| 10923196 |
Erase operation in 3D NAND |
Peter Rabkin, Kwang Ho Kim |
2021-02-16 |
| 10910064 |
Location dependent impedance mitigation in non-volatile memory |
Peter Rabkin, Kwang Ho Kim |
2021-02-02 |
| 10903222 |
Three-dimensional memory device containing a carbon-doped source contact layer and methods for making the same |
Kiyohiko Sakakibara, Masanori Tsutsumi, Zhixin Cui |
2021-01-26 |