Issued Patents 2021
Showing 1–13 of 13 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11177284 | Ferroelectric memory devices containing a two-dimensional charge carrier gas channel and methods of making the same | Masaaki Higashitani, Alan Kalitsov | 2021-11-16 |
| 11164883 | Three-dimensional memory device containing aluminum-silicon word lines and methods of manufacturing the same | Masaaki Higashitani, Jayavel Pachamuthu | 2021-11-02 |
| 11107516 | Ferroelectric memory devices containing a two-dimensional charge carrier gas channel and methods of making the same | Masaaki Higashitani | 2021-08-31 |
| 11094653 | Bonded assembly containing a dielectric bonding pattern definition layer and methods of forming the same | Chen Wu, Yangyin Chen, Masaaki Higashitani | 2021-08-17 |
| 11088116 | Bonded assembly containing horizontal and vertical bonding interfaces and methods of forming the same | Chen Wu, Masaaki Higashitani | 2021-08-10 |
| 11074976 | Temperature dependent impedance mitigation in non-volatile memory | Kwang Ho Kim, Masaaki Higashitani | 2021-07-27 |
| 11037908 | Bonded die assembly containing partially filled through-substrate via structures and methods for making the same | Chen Wu, Yangyin Chen, Masaaki Higashitani | 2021-06-15 |
| 11031088 | Hot-cold VTH mismatch using VREAD modulation | Dae Wung Kang, Masaaki Higashitani | 2021-06-08 |
| 11004773 | Porous barrier layer for improving reliability of through-substrate via structures and methods of forming the same | Chen Wu, Masaaki Higashitani | 2021-05-11 |
| 10991721 | Three-dimensional memory device including liner free molybdenum word lines and methods of making the same | Raghuveer S. Makala, Masaaki Higashitani | 2021-04-27 |
| 10978145 | Programming to minimize cross-temperature threshold voltage widening | Biswajit Ray, Mohan Dunga, Gerrit Jan Hemink, Changyuan Chen | 2021-04-13 |
| 10923196 | Erase operation in 3D NAND | Kwang Ho Kim, Masaaki Higashitani | 2021-02-16 |
| 10910064 | Location dependent impedance mitigation in non-volatile memory | Kwang Ho Kim, Masaaki Higashitani | 2021-02-02 |