Issued Patents 2021
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11195820 | Semiconductor device including fractured semiconductor dies | Daniel Linnen, Kirubakaran Periyannan, Narendhiran Cr, Jay Dholakia, Everett Lyons, IV +2 more | 2021-12-07 |
| 11164883 | Three-dimensional memory device containing aluminum-silicon word lines and methods of manufacturing the same | Peter Rabkin, Masaaki Higashitani | 2021-11-02 |
| 11107540 | Program disturb improvements in multi-tier memory devices including improved non-data conductive gate implementation | Dengtao Zhao | 2021-08-31 |
| 11101284 | Three-dimensional memory device containing etch stop structures and methods of making the same | Hiroyuki Kinoshita, Masaaki Higashitani, Makoto Dei, Junji Oh | 2021-08-24 |
| 11037631 | Column erasing in non-volatile memory strings | Amul Desai, Ankitkumar Babariya | 2021-06-15 |
| 11024645 | Three-dimensional memory device containing a silicon nitride ring in an opening in a memory film and method of making the same | Takumi Moriyama, Yasushi Dowaki, Yuki KASAI, Satoshi Shimizu | 2021-06-01 |
| 10991718 | Three-dimensional memory device containing a vertical semiconductor channel containing a connection strap and method of making the same | Hiroyuki Kinoshita, Marika Gunji-Yoneoka, Tadashi Nakamura, Tomohiro Oginoe | 2021-04-27 |
| 10991706 | Three-dimensional memory device having enhanced contact between polycrystalline channel and epitaxial pedestal structure and method of making the same | Masatoshi Nishikawa | 2021-04-27 |
| 10991705 | Three-dimensional memory device having enhanced contact between polycrystalline channel and epitaxial pedestal structure and method of making the same | Masatoshi Nishikawa | 2021-04-27 |
| 10943662 | Different word line programming orders in non-volatile memory for error recovery | Daniel Linnen, Kirubakaran Periyannan | 2021-03-09 |