Issued Patents 2021
Showing 1–20 of 20 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11201139 | Semiconductor structure containing reentrant shaped bonding pads and methods of forming the same | Rahul Sharangpani, Adarsh Rajashekhar, Senaka Kanakamedala, Fei Zhou | 2021-12-14 |
| 11177280 | Three-dimensional memory device including wrap around word lines and methods of forming the same | Adarsh Rajashekhar, Rahul Sharangpani, Fei Zhou, Yanli Zhang | 2021-11-16 |
| 11171097 | Bonded assembly containing metal-organic framework bonding dielectric and methods of forming the same | Ramy Nashed Bassely Said, Senaka Kanakamedala, Fei Zhou, Yao-Sheng Lee | 2021-11-09 |
| 11145628 | Semiconductor structure containing reentrant shaped bonding pads and methods of forming the same | Rahul Sharangpani, Adarsh Rajashekhar, Senaka Kanakamedala, Fei Zhou | 2021-10-12 |
| 11139272 | Bonded assembly containing oxidation barriers and/or adhesion enhancers and methods of forming the same | Johann Alsmeier | 2021-10-05 |
| 11127728 | Three-dimensional semiconductor chip containing memory die bonded to both sides of a support die and methods of making the same | Fei Zhou, Adarsh Rajashekhar, Rahul Sharangpani | 2021-09-21 |
| 11121140 | Ferroelectric tunnel junction memory device with integrated ovonic threshold switches | Seung-Yeul Yang, Fei Zhou, Adarsh Rajashekhar, Rahul Sharangpani | 2021-09-14 |
| 11114534 | Three-dimensional nor array including vertical word lines and discrete channels and methods of making the same | Adarsh Rajashekhar, Fei Zhou, Yanli Zhang, Rahul Sharangpani | 2021-09-07 |
| 11114406 | Warpage-compensated bonded structure including a support chip and a three-dimensional memory chip | Senaka Kanakamedala, Yao-Sheng Lee, Jian Chen | 2021-09-07 |
| 11101288 | Three-dimensional memory device containing plural work function word lines and methods of forming the same | Yanli Zhang, Dong-Il Moon, Peng Zhang, Wei Zhao, Ashish Baraskar | 2021-08-24 |
| 11063063 | Three-dimensional memory device containing plural work function word lines and methods of forming the same | Yanli Zhang, Dong-Il Moon, Peng Zhang, Wei Zhao, Ashish Baraskar | 2021-07-13 |
| 11049880 | Three-dimensional memory device containing epitaxial ferroelectric memory elements and methods for forming the same | Adarsh Rajashekhar, Fei Zhou, Rahul Sharangpani | 2021-06-29 |
| 11024648 | Ferroelectric memory devices including a stack of ferroelectric and antiferroelectric layers and method of making the same | Rahul Sharangpani, Adarsh Rajashekhar, Yanli Zhang, Seung-Yeul Yang, Fei Zhou | 2021-06-01 |
| 10998331 | Three-dimensional inverse flat NAND memory device containing partially discrete charge storage elements and methods of making the same | Fei Zhou, Yingda Dong | 2021-05-04 |
| 10991721 | Three-dimensional memory device including liner free molybdenum word lines and methods of making the same | Peter Rabkin, Masaaki Higashitani | 2021-04-27 |
| 10985172 | Three-dimensional memory device with mobility-enhanced vertical channels and methods of forming the same | Chun Ge, Yanli Zhang, Fei Zhou | 2021-04-20 |
| 10950629 | Three-dimensional flat NAND memory device having high mobility channels and methods of making the same | Fei Zhou, Senaka Kanakamedala, Yao-Sheng Lee | 2021-03-16 |
| 10937809 | Three-dimensional memory device containing ferroelectric memory elements encapsulated by transition metal nitride materials and method of making thereof | Rahul Sharangpani, Seung-Yeul Yang, Fei Zhou, Adarsh Rajashekhar | 2021-03-02 |
| 10916504 | Three-dimensional memory device including electrically conductive layers with molybdenum-containing liners | Yusuke Mukae, Naoki Takeguchi, Kensuke Yamaguchi, Yujin Terasawa | 2021-02-09 |
| 10910272 | Reusable support substrate for formation and transfer of semiconductor devices and methods of using the same | Fei Zhou, Senaka Kanakamedala | 2021-02-02 |