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Three-dimensional memory device containing plural work function word lines and methods of forming the same |
Yanli Zhang, Dong-Il Moon, Raghuveer S. Makala, Peng Zhang, Wei Zhao |
2021-08-24 |
| 11063063 |
Three-dimensional memory device containing plural work function word lines and methods of forming the same |
Yanli Zhang, Dong-Il Moon, Raghuveer S. Makala, Peng Zhang, Wei Zhao |
2021-07-13 |
| 11037640 |
Multi-pass programming process for memory device which omits verify test in first program pass |
Ching-Huang Lu, Vinh Diep, Yingda Dong |
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Memory device with compensation for program speed variations due to block oxide thinning |
Ching-Huang Lu, Vinh Diep |
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Reprogramming memory cells to tighten threshold voltage distributions and improve data retention |
Han-Ping Chen, Henry Chin |
2021-03-30 |
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Memory device with compensation for erase speed variations due to blocking oxide layer thinning |
Ching-Huang Lu, Vinh Diep |
2021-02-16 |