Issued Patents 2021
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11121140 | Ferroelectric tunnel junction memory device with integrated ovonic threshold switches | Raghuveer S. Makala, Fei Zhou, Adarsh Rajashekhar, Rahul Sharangpani | 2021-09-14 |
| 11024648 | Ferroelectric memory devices including a stack of ferroelectric and antiferroelectric layers and method of making the same | Rahul Sharangpani, Adarsh Rajashekhar, Raghuveer S. Makala, Yanli Zhang, Fei Zhou | 2021-06-01 |
| 10937809 | Three-dimensional memory device containing ferroelectric memory elements encapsulated by transition metal nitride materials and method of making thereof | Rahul Sharangpani, Raghuveer S. Makala, Fei Zhou, Adarsh Rajashekhar | 2021-03-02 |