| 11201139 |
Semiconductor structure containing reentrant shaped bonding pads and methods of forming the same |
Rahul Sharangpani, Raghuveer S. Makala, Senaka Kanakamedala, Fei Zhou |
2021-12-14 |
| 11177280 |
Three-dimensional memory device including wrap around word lines and methods of forming the same |
Rahul Sharangpani, Raghuveer S. Makala, Fei Zhou, Yanli Zhang |
2021-11-16 |
| 11145628 |
Semiconductor structure containing reentrant shaped bonding pads and methods of forming the same |
Rahul Sharangpani, Raghuveer S. Makala, Senaka Kanakamedala, Fei Zhou |
2021-10-12 |
| 11127728 |
Three-dimensional semiconductor chip containing memory die bonded to both sides of a support die and methods of making the same |
Fei Zhou, Raghuveer S. Makala, Rahul Sharangpani |
2021-09-21 |
| 11121140 |
Ferroelectric tunnel junction memory device with integrated ovonic threshold switches |
Seung-Yeul Yang, Raghuveer S. Makala, Fei Zhou, Rahul Sharangpani |
2021-09-14 |
| 11114534 |
Three-dimensional nor array including vertical word lines and discrete channels and methods of making the same |
Fei Zhou, Raghuveer S. Makala, Yanli Zhang, Rahul Sharangpani |
2021-09-07 |
| 11049880 |
Three-dimensional memory device containing epitaxial ferroelectric memory elements and methods for forming the same |
Fei Zhou, Rahul Sharangpani, Raghuveer S. Makala |
2021-06-29 |
| 11024648 |
Ferroelectric memory devices including a stack of ferroelectric and antiferroelectric layers and method of making the same |
Rahul Sharangpani, Raghuveer S. Makala, Yanli Zhang, Seung-Yeul Yang, Fei Zhou |
2021-06-01 |
| 10937809 |
Three-dimensional memory device containing ferroelectric memory elements encapsulated by transition metal nitride materials and method of making thereof |
Rahul Sharangpani, Raghuveer S. Makala, Seung-Yeul Yang, Fei Zhou |
2021-03-02 |