Issued Patents 2021
Showing 1–13 of 13 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11195857 | Bonded three-dimensional memory devices and methods of making the same by replacing carrier substrate with source layer | James Kai, Ching-Huang Lu, Murshed Chowdhury | 2021-12-07 |
| 11164890 | Cross-point array of ferroelectric field effect transistors and method of making the same | Yanli Zhang, Fei Zhou | 2021-11-02 |
| 11139272 | Bonded assembly containing oxidation barriers and/or adhesion enhancers and methods of forming the same | Raghuveer S. Makala | 2021-10-05 |
| 11127729 | Method for removing a bulk substrate from a bonded assembly of wafers | James Kai, Murshed Chowdhury, Koichi Matsuno | 2021-09-21 |
| 11094704 | Method of forming a three-dimensional memory device and a driver circuit on opposite sides of a substrate | Yanli Zhang, Teruo Okina | 2021-08-17 |
| 11088170 | Three-dimensional ferroelectric memory array including integrated gate selectors and methods of forming the same | Yanli Zhang | 2021-08-10 |
| 11043455 | Three-dimensional memory device including self-aligned dielectric isolation regions for connection via structures and method of making the same | James Kai, Jixin Yu | 2021-06-22 |
| 11018153 | Three-dimensional memory device containing alternating stack of source layers and drain layers and vertical gate electrodes | James Kai, Murshed Chowdhury | 2021-05-25 |
| 10985169 | Three-dimensional device with bonded structures including a support die and methods of making the same | James Kai, Murshed Chowdhury, Koichi Matsuno | 2021-04-20 |
| 10978482 | Ferroelectric memory device with select gate transistor and method of forming the same | Yanli Zhang | 2021-04-13 |
| 10950626 | Three-dimensional memory device containing alternating stack of source layers and drain layers and vertical gate electrodes | James Kai, Murshed Chowdhury, Raiden Matsuno | 2021-03-16 |
| 10937800 | Three-dimensional memory device with on-axis self-aligned drain-select-level isolation structure and methods of manufacturing the same | Tae Kyung Kim | 2021-03-02 |
| 10916287 | Ferroelectric memory device containing a series connected select gate transistor and method of forming the same | Yanli Zhang | 2021-02-09 |