| 11201107 |
Bonded three-dimensional memory devices and methods of making the same by replacing carrier substrate with source layer |
Teruo Okina, Akio Nishida |
2021-12-14 |
| 11195857 |
Bonded three-dimensional memory devices and methods of making the same by replacing carrier substrate with source layer |
Ching-Huang Lu, Murshed Chowdhury, Johann Alsmeier |
2021-12-07 |
| 11195781 |
Bonded three-dimensional memory devices and methods of making the same by replacing carrier substrate with source layer |
Teruo Okina, Akio Nishida |
2021-12-07 |
| 11127729 |
Method for removing a bulk substrate from a bonded assembly of wafers |
Murshed Chowdhury, Koichi Matsuno, Johann Alsmeier |
2021-09-21 |
| 11043455 |
Three-dimensional memory device including self-aligned dielectric isolation regions for connection via structures and method of making the same |
Johann Alsmeier, Jixin Yu |
2021-06-22 |
| 11037943 |
Three-dimensional memory device having on-pitch drain select gate electrodes and method of making the same |
Muneyuki Imai |
2021-06-15 |
| 11018153 |
Three-dimensional memory device containing alternating stack of source layers and drain layers and vertical gate electrodes |
Johann Alsmeier, Murshed Chowdhury |
2021-05-25 |
| 10985169 |
Three-dimensional device with bonded structures including a support die and methods of making the same |
Murshed Chowdhury, Koichi Matsuno, Johann Alsmeier |
2021-04-20 |
| 10950626 |
Three-dimensional memory device containing alternating stack of source layers and drain layers and vertical gate electrodes |
Johann Alsmeier, Murshed Chowdhury, Raiden Matsuno |
2021-03-16 |
| 10943917 |
Three-dimensional memory device with drain-select-level isolation structures and method of making the same |
Takaaki Iwai, Makoto Koto, Sayako Nagamine, Ching-Huang Lu, Wei Zhao +1 more |
2021-03-09 |