Issued Patents All Time
Showing 101–125 of 625 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11569233 | Techniques and mechanisms for operation of stacked transistors | Ravi Pillarisetty, Willy Rachmady, Marko Radosavljevic, Van H. Le | 2023-01-31 |
| 11563119 | Etchstop regions in fins of semiconductor devices | Cheng-Ying Huang, Willy Rachmady, Gilbert Dewey, Erica J. Thompson, Aaron D. Lilak | 2023-01-24 |
| 11538808 | Structures and methods for memory cells | Sean T. Ma, Aaron D. Lilak, Abhishek A. Sharma, Van H. Le, Seung Hoon Sung +3 more | 2022-12-27 |
| 11532719 | Transistors on heterogeneous bonding layers | Kimin Jun, Gilbert Dewey, Willy Rachmady, Aaron D. Lilak, Brennen Mueller +5 more | 2022-12-20 |
| 11532601 | Group III-N transistors for system on chip (SOC) architecture integrating power management and radio frequency circuits | Han Wui Then, Robert S. Chau, Valluri Rao, Niloy Mukherjee, Marko Radosavljevic +2 more | 2022-12-20 |
| 11532619 | Transistor structures including a non-planar body having variable and complementary semiconductor and insulator portions | Willy Rachmady, Cheng-Ying Huang, Gilbert Dewey, Caleb BARRETT, Jay P. Gupta +7 more | 2022-12-20 |
| 11532439 | Ultra-dense ferroelectric memory with self-aligned patterning | Chia-Ching Lin, Sou-Chi Chang, Nazila Haratipour, Seung Hoon Sung, Ashish Verma Penumatcha +2 more | 2022-12-20 |
| 11527656 | Contact electrodes for vertical thin-film transistors | Van H. Le, Tahir Ghani, Gilbert Dewey, Matthew V. Metz, Miriam Reshotko +4 more | 2022-12-13 |
| 11522060 | Epitaxial layers on contact electrodes for thin- film transistors | Seung Hoon Sung, Justin R. Weber, Matthew V. Metz, Arnab Sen Gupta, Abhishek A. Sharma +8 more | 2022-12-06 |
| 11522012 | Deep in memory architecture using resistive switches | Ian A. Young, Ram Krishnamurthy, Ravi Pillarisetty, Sasikanth Manipatruni, Gregory K. Chen +7 more | 2022-12-06 |
| 11522059 | Metallic sealants in transistor arrangements | Abhishek A. Sharma, Tahir Ghani, Gilbert Dewey, Van H. Le, Lawrence Wong +1 more | 2022-12-06 |
| 11515402 | Microelectronic transistor source/drain formation using angled etching | Seung Hoon Sung, Robert Turkot, Marko Radosavljevic, Han Wui Then, Willy Rachmady +1 more | 2022-11-29 |
| 11508577 | Channel layer formation for III-V metal-oxide-semiconductor field effect transistors (MOSFETs) | Gilbert Dewey, Matthew V. Metz, Willy Rachmady, Sean T. Ma, Nicholas G. Minutillo +4 more | 2022-11-22 |
| 11476338 | Aluminum indium phosphide subfin germanium channel transistors | Matthew V. Metz, Willy Rachmady, Harold W. Kennel, Van H. Le, Benjamin Chu-Kung +1 more | 2022-10-18 |
| 11476366 | Transistor including wrap around source and drain contacts | Sean T. Ma, Abhishek A. Sharma, Gilbert Dewey, Van H. Le | 2022-10-18 |
| 11469323 | Ferroelectric gate stack for band-to-band tunneling reduction | Gilbert Dewey, Willy Rachmady, Cheng-Ying Huang, Matthew V. Metz, Sean T. Ma +2 more | 2022-10-11 |
| 11462541 | Memory cells based on vertical thin-film transistors | Juan G. Alzate Vinasco, Abhishek A. Sharma, Fatih Hamzaoglu, Bernhard Sell, Pei-Hua Wang +5 more | 2022-10-04 |
| 11456372 | Multi-height finfet device by selective oxidation | Seiyon Kim, Gopinath Bhimarasetti, Rafael Rios, Tahir Ghani, Anand S. Murthy +1 more | 2022-09-27 |
| 11450739 | Germanium-rich nanowire transistor with relaxed buffer layer | Glenn A. Glass, Anand S. Murthy, Cory Bomberger, Tahir Ghani, Siddharth Chouksey +3 more | 2022-09-20 |
| 11450750 | Thin-film transistors with vertical channels | Nazila Haratipour, Tahir Ghani, Gilbert Dewey, Benjamin Chu-Kung, Seung Hoon Sung +3 more | 2022-09-20 |
| 11450527 | Engineering tensile strain buffer in art for high quality Ge channel | Van H. Le, Benjamin Chu-Kung, Willy Rachmady, Marc C. French, Seung Hoon Sung +2 more | 2022-09-20 |
| 11450669 | Stacked thin-film transistor based embedded dynamic random-access memory | Abhishek A. Sharma, Juan G. Alzate-Vinasco, Fatih Hamzaoglu, Bernhard Sell, Pei-Hua Wang +5 more | 2022-09-20 |
| 11444204 | Transistor device with channel recess structure and method of providing same | Abhishek A. Sharma, Van H. Le, Sean T. Ma, Benjamin Chu-Kung | 2022-09-13 |
| 11444205 | Contact stacks to reduce hydrogen in thin film transistor | Arnab Sen Gupta, Matthew V. Metz, Benjamin Chu-Kung, Abhishek A. Sharma, Van H. Le +7 more | 2022-09-13 |
| 11444159 | Field effect transistors with wide bandgap materials | Sean T. Ma, Gilbert Dewey, Willy Rachmady, Matthew V. Metz, Cheng-Ying Huang +3 more | 2022-09-13 |