Issued Patents All Time
Showing 1,001–1,025 of 2,819 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10361285 | Forming vertical transport field effect transistors with uniform bottom spacer thickness | Xuefeng Liu, Peng Xu, Yongan Xu | 2019-07-23 |
| 10361315 | Method and apparatus of fabricating source and drain epitaxy for vertical field effect transistor | Chun-Chen Yeh, Ruilong Xie, Tenko Yamashita, Cheng Chi, Chen Zhang | 2019-07-23 |
| 10361125 | Methods and structures for forming uniform fins when using hardmask patterns | Peng Xu, Yann Mignot, Choonghyun Lee | 2019-07-23 |
| 10361155 | Electrical fuse and/or resistor structures | Veeraraghavan S. Basker, Ali Khakifirooz, Juntao Li | 2019-07-23 |
| 10361197 | FinFETs with controllable and adjustable channel doping | Xin Miao, Wenyu Xu, Chen Zhang | 2019-07-23 |
| 10355118 | Single-electron transistor with self-aligned coulomb blockade | Qing Cao, Zhengwen Li, Fei Liu | 2019-07-16 |
| 10354921 | Stacked transistors with different channel widths | Lawrence A. Clevenger, Balasubramanian Pranatharthiharan, John H. Zhang | 2019-07-16 |
| 10347752 | Semiconductor structures having increased channel strain using fin release in gate regions | Bruce B. Doris, Ali Khakifirooz, Darsen D. Lu, Alexander Reznicek, Kern Rim | 2019-07-09 |
| 10347784 | Radiation sensor, method of forming the sensor and device including the sensor | Xin Miao, Wenyu Xu, Chen Zhang | 2019-07-09 |
| 10347719 | Nanosheet transistors on bulk material | Ruilong Xie, Tenko Yamashita, Chun-Chen Yeh | 2019-07-09 |
| 10347727 | Fin-type FET with low source or drain contact resistance | Juntao Li, Heng Wu, Peng Xu | 2019-07-09 |
| 10347628 | Simultaneously fabricating a high voltage transistor and a FinFET | Ali Khakifirooz, Alexander Reznicek, Charan V. Surisetty | 2019-07-09 |
| 10347731 | Transistor with asymmetric spacers | Zhenxing Bi, Heng Wu, Peng Xu | 2019-07-09 |
| 10347537 | Forming insulator fin structure in isolation region to support gate structures | Peng Xu | 2019-07-09 |
| 10347539 | Germanium dual-fin field effect transistor | Karthik Balakrishnan, Pouya Hashemi, Alexander Reznicek | 2019-07-09 |
| 10347743 | Vertical transport fin field effect transistor (VT FinFET) having an uniform L-shaped inner spacer | Juntao Li, Peng Xu, Jingyun Zhang | 2019-07-09 |
| 10347744 | Method and structure of forming FinFET contact | Peng Xu | 2019-07-09 |
| 10340368 | Fin formation in fin field effect transistors | Bruce B. Doris, Hong He, Ali Khakifirooz, Yunpeng Yin | 2019-07-02 |
| 10340292 | Extremely thin silicon-on-insulator silicon germanium device without edge strain relaxation | Juntao Li, Zuoguang Liu, Xin Miao | 2019-07-02 |
| 10340341 | Self-limiting and confining epitaxial nucleation | Robin Hsin Kuo Chao, Nicolas Loubet | 2019-07-02 |
| 10340364 | H-shaped VFET with increased current drivability | Chen Zhang, Tenko Yamashita, Xin Miao, Wenyu Xu | 2019-07-02 |
| 10333000 | Forming strained channel with germanium condensation | Shogo Mochizuki, Jie Yang | 2019-06-25 |
| 10332999 | Method and structure of forming fin field-effect transistor without strain relaxation | Juntao Li, Choonghyun Lee, Peng Xu, Heng Wu | 2019-06-25 |
| 10332986 | Formation of inner spacer on nanosheet MOSFET | Zhenxing Bi, Juntao Li, Peng Xu | 2019-06-25 |
| 10332800 | Vertical field effect transistor having U-shaped top spacer | Xin Miao, Wenyu Xu, Chen Zhang | 2019-06-25 |