Issued Patents All Time
Showing 951–975 of 2,819 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10395994 | Equal spacer formation on semiconductor device | Heng Wu, Juntao Li, Peng Xu, Choonghyun Lee | 2019-08-27 |
| 10395996 | Method for forming a semiconductor structure containing high mobility semiconductor channel materials | Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2019-08-27 |
| 10396151 | Vertical field effect transistor with reduced gate to source/drain capacitance | Juntao Li, Choonghyun Lee, Peng Xu | 2019-08-27 |
| 10396027 | Electrical fuse and/or resistor structures | Veeraraghavan S. Basker, Ali Khakifirooz, Juntao Li | 2019-08-27 |
| 10396069 | Approach to fabrication of an on-chip resistor with a field effect transistor | Veeraraghavan S. Basker, Theodorus E. Standaert, Junli Wang | 2019-08-27 |
| 10396152 | Fabrication of perfectly symmetric gate-all-around FET on suspended nanowire using interface interaction | Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2019-08-27 |
| 10396169 | Nanosheet transistors having different gate dielectric thicknesses on the same chip | Juntao Li, Geng Wang, Qintao Zhang | 2019-08-27 |
| 10388718 | Metal-insulator-metal capacitor structure | Veeraraghavan S. Basker, Theodorus E. Standaert, Junli Wang | 2019-08-20 |
| 10388576 | Semiconductor device including dual trench epitaxial dual-liner contacts | Veeraraghavan S. Basker, Theodorus E. Standaert, Junli Wang | 2019-08-20 |
| 10388729 | Devices and methods of forming self-aligned, uniform nano sheet spacers | John H. Zhang, Lawrence A. Clevenger, Balasubramanian S. Haran | 2019-08-20 |
| 10388571 | Fin type field effect transistors with different pitches and substantially uniform fin reveal | Zhenxing Bi, Thamarai S. Devarajan, Balasubramanian Pranatharthiharan | 2019-08-20 |
| 10388572 | Integrating metal-insulator-metal capacitors with fabrication of vertical field effect transistors | Xuefeng Liu, Heng Wu, Peng Xu | 2019-08-20 |
| 10388731 | Stacked nanowire device width adjustment by gas cluster ion beam (GCIB) | Xin Miao, Ruilong Xie, Tenko Yamashita | 2019-08-20 |
| 10388732 | Nanosheet field-effect transistors including a two-dimensional semiconducting material | Julien Frougier, Ruilong Xie, Nicolas Loubet, Juntao Li | 2019-08-20 |
| 10388754 | Unmerged epitaxial process for FinFET devices with aggressive fin pitch scaling | Xiuyu Cai, Ali Khakifirooz, Ruilong Xie, Tenko Yamashita | 2019-08-20 |
| 10388569 | Formation of stacked nanosheet semiconductor devices | Juntao Li, Heng Wu, Peng Xu | 2019-08-20 |
| 10388755 | Stacked nanosheets with self-aligned inner spacers and metallic source/drain | Choonghyun Lee, Juntao Li | 2019-08-20 |
| 10388760 | Sub-thermal switching slope vertical field effect transistor with dual-gate feedback loop mechanism | Julien Frougier, Ruilong Xie, Steven R. Bentley, Nicolas Loubet, Pietro Montanini | 2019-08-20 |
| 10389519 | Hardware based cryptographic side-channel attack prevention | Shawn P. Fetterolf, Ali Khakifirooz | 2019-08-20 |
| 10388570 | Substrate with a fin region comprising a stepped height structure | Peng Xu | 2019-08-20 |
| 10388577 | Nanosheet devices with different types of work function metals | Xin Miao, Wenyu Xu, Chen Zhang | 2019-08-20 |
| 10388795 | Vertical transistor including controlled gate length and a self-aligned junction | Ramachandra Divakaruni | 2019-08-20 |
| 10388651 | Shallow trench isolation recess process flow for vertical field effect transistor fabrication | Zhenxing Bi, Bruce Miao, Xin Miao | 2019-08-20 |
| 10381355 | Dense vertical field effect transistor structure | Peng Xu, Zhenxing Bi, Juntao Li | 2019-08-13 |
| 10381468 | Method and structure for forming improved single electron transistor with gap tunnel barriers | Xin Miao, Wenyu Xu, Chen Zhang | 2019-08-13 |