Issued Patents All Time
Showing 976–1,000 of 2,819 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10381355 | Dense vertical field effect transistor structure | Peng Xu, Zhenxing Bi, Juntao Li | 2019-08-13 |
| 10381262 | Fabrication of vertical transport fin field effect transistors with a self-aligned separator and an isolation region with an air gap | Zuoguang Liu, Sebastian Naczas, Heng Wu, Peng Xu | 2019-08-13 |
| 10381267 | Field effect device with reduced capacitance and resistance in source/drain contacts at reduced gate pitch | Chi-Chun Liu, Peng Xu | 2019-08-13 |
| 10381273 | Vertically stacked multi-channel transistor structure | Tenko Yamashita, Chun-Chen Yeh, Ruilong Xie | 2019-08-13 |
| 10374073 | Single electron transistor with wrap-around gate | Xin Miao, Wenyu Xu, Chen Zhang | 2019-08-06 |
| 10374083 | Vertical fin field effect transistor with reduced gate length variations | Chen Zhang, Xin Miao, Wenyu Xu | 2019-08-06 |
| 10374064 | Fin field effect transistor complementary metal oxide semiconductor with dual strained channels with solid phase doping | Ruilong Xie, Tenko Yamashita | 2019-08-06 |
| 10374089 | Tensile strain in NFET channel | Peng Xu, Juntao Li, Heng Wu | 2019-08-06 |
| 10374035 | Bulk nanosheet with dielectric isolation | Bruce B. Doris, Junli Wang | 2019-08-06 |
| 10374091 | Silicon germanium fin immune to epitaxy defect | Juntao Li, Xin Miao | 2019-08-06 |
| 10373873 | Gate cut in replacement metal gate process | Chanro Park, Ruilong Xie, Laertis Economikos | 2019-08-06 |
| 10373905 | Integrating metal-insulator-metal capacitors with air gap process flow | Veeraraghavan S. Basker, Theodorus E. Standaert, Junli Wang | 2019-08-06 |
| 10373908 | Dielectric thermal conductor for passivating eFuse and metal resistor | Qing Cao, Zhengwen Li, Fei Liu | 2019-08-06 |
| 10367069 | Fabrication of vertical field effect transistor structure with controlled gate length | Ruilong Xie, Tenko Yamashita, Chun-Chen Yeh | 2019-07-30 |
| 10367076 | Air gap spacer with controlled air gap height | Xin Miao, Wenyu Xu, Chen Zhang | 2019-07-30 |
| 10366930 | Self-aligned gate cut isolation | Ruilong Xie, Chanro Park, Min Gyu Sung, Guillaume Bouche | 2019-07-30 |
| 10367077 | Wrap around contact using sacrificial mandrel | Nicolas Loubet, Adra Carr | 2019-07-30 |
| 10365379 | Colorimetric radiation dosimetry | Qing Cao, Zhengwen Li, Fei Liu | 2019-07-30 |
| 10366881 | Porous fin as compliant medium to form dislocation-free heteroepitaxial films | Keith E. Fogel, Jeehwan Kim, Devendra K. Sadana | 2019-07-30 |
| 10361315 | Method and apparatus of fabricating source and drain epitaxy for vertical field effect transistor | Chun-Chen Yeh, Ruilong Xie, Tenko Yamashita, Cheng Chi, Chen Zhang | 2019-07-23 |
| 10361301 | Fabrication of vertical fin transistor with multiple threshold voltages | Karthik Balakrishnan, Pouya Hashemi, Alexander Reznicek | 2019-07-23 |
| 10361303 | Vertical transport fin field effect transistors on a substrate with varying effective gate lengths | Zhenxing Bi, Juntao Li, Peng Xu | 2019-07-23 |
| 10361285 | Forming vertical transport field effect transistors with uniform bottom spacer thickness | Xuefeng Liu, Peng Xu, Yongan Xu | 2019-07-23 |
| 10361308 | Self-aligned gate cut with polysilicon liner oxidation | Peng Xu | 2019-07-23 |
| 10361199 | Vertical transistor transmission gate with adjacent NFET and PFET | Karthik Balakrishnan, Pouya Hashemi, Alexander Reznicek | 2019-07-23 |