Issued Patents All Time
Showing 451–475 of 2,819 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10950711 | Fabrication of vertical field effect transistor structure with strained channels | Juntao Li | 2021-03-16 |
| 10950506 | Forming single and double diffusion breaks | Ruilong Xie, Juntao Li, Junli Wang | 2021-03-16 |
| 10950505 | Multiple finFET formation with epitaxy separation | Peng Xu | 2021-03-16 |
| 10950492 | Fabrication of vertical transport fin field effect transistors with a self-aligned separator and an isolation region with an air gap | Zuoguang Liu, Sebastian Naczas, Heng Wu, Peng Xu | 2021-03-16 |
| 10950459 | Back end of line structures with metal lines with alternating patterning and metallization schemes | Ruilong Xie, Chanro Park, Chih-Chao Yang, Juntao Li | 2021-03-16 |
| 10944013 | Self-aligned source/drain contact for vertical field effect transistor | Wenyu Xu, Chen Zhang, Xin Miao | 2021-03-09 |
| 10944012 | Area-efficient inverter using stacked vertical transistors | Alexander Reznicek, Karthik Balakrishnan, Pouya Hashemi | 2021-03-09 |
| 10943992 | Transistor having straight bottom spacers | Christopher J. Waskiewicz, Michael P. Belyansky, Brent A. Anderson, Muthumanickam Sankarapandian, Puneet Harischandra Suvarna +1 more | 2021-03-09 |
| 10943902 | Forming strained channels for CMOS device fabrication | Juntao Li, John G. Gaudiello | 2021-03-09 |
| 10943835 | Fabrication of silicon germanium channel and silicon/silicon germanium dual channel field-effect transistors | Choonghyun Lee, Juntao Li, Shogo Mochizuki | 2021-03-09 |
| 10943816 | Mask removal for tight-pitched nanostructures | Juntao Li, Choonghyun Lee | 2021-03-09 |
| 10937866 | Method and structure for forming silicon germanium FinFET | Peng Xu, Juntao Li, Heng Wu | 2021-03-02 |
| 10937863 | Fabrication of perfectly symmetric gate-all-around FET on suspended nanowire using interface interaction | Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2021-03-02 |
| 10937860 | Nanosheet transistor bottom isolation | Zhenxing Bi, Yi Song, Lijuan Zou | 2021-03-02 |
| 10937810 | Sub-fin removal for SOI like isolation with uniform active fin height | Marc A. Bergendahl, Gauri Karve, Fee Li Lie, Eric R. Miller, John R. Sporre +1 more | 2021-03-02 |
| 10937792 | Dense vertical field effect transistor structure | Peng Xu, Zhenxing Bi, Juntao Li | 2021-03-02 |
| 10937703 | Field-effect transistor having dual channels | Zhenxing Bi, Juntao Li, Peng Xu | 2021-03-02 |
| 10935516 | Ion-sensitive field-effect transistor formed with alternating dielectric stack to enhance sensitivity | Chanro Park, Juntao Li, Ruilong Xie | 2021-03-02 |
| 10935515 | Stacked nanofluidics structure | — | 2021-03-02 |
| 10930779 | Method of forming a vertical transistor pass gate device | Karthik Balakrishnan, Pouya Hashemi, Alexander Reznicek | 2021-02-23 |
| 10930778 | Vertical transistor devices with composite high-K and low-K spacers with a controlled top junction | Chen Zhang, Xin Miao, Wenyu Xu | 2021-02-23 |
| 10930760 | Fabrication of vertical field effect transistor structure with strained channels | Juntao Li | 2021-02-23 |
| 10930759 | Fabrication of vertical field effect transistor structure with strained channels | Juntao Li | 2021-02-23 |
| 10930758 | Space deposition between source/drain and sacrificial layers | Shogo Mochizuki, Juntao Li, Choonghyun Lee | 2021-02-23 |
| 10930756 | Gate spacer and inner spacer formation for nanosheet transistors having relatively small space between gates | Zhenxing Bi, Nicolas Loubet, Xin Miao, Wenyu Xu, Chen Zhang | 2021-02-23 |