Issued Patents All Time
Showing 426–450 of 2,819 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10985063 | Semiconductor device with local connection | Lawrence A. Clevenger, Carl Radens, Junli Wang, John H. Zhang | 2021-04-20 |
| 10985062 | Self-aligned contact cap | Peng Xu | 2021-04-20 |
| 10978574 | Floating gate prevention and capacitance reduction in semiconductor devices | Ruilong Xie, Chanro Park, Juntao Li | 2021-04-13 |
| 10978572 | Self-aligned contact with metal-insulator transition materials | Choonghyun Lee, Juntao Li, Peng Xu | 2021-04-13 |
| 10978571 | Self-aligned contact with metal-insulator transition materials | Choonghyun Lee, Juntao Li, Peng Xu | 2021-04-13 |
| 10971601 | Replacement metal gate structures | Veeraraghavan S. Basker, Theodorus E. Standaert, Junli Wang | 2021-04-06 |
| 10971584 | Low contact resistance nanowire FETs | Peng Xu, Juntao Li, Choonghyun Lee | 2021-04-06 |
| 10971549 | Semiconductor memory device having a vertical active region | Juntao Li, Takashi Ando, Dexin Kong | 2021-04-06 |
| 10971522 | High mobility complementary metal-oxide-semiconductor (CMOS) devices with fins on insulator | Xin Miao, Chen Zhang, Wenyu Xu | 2021-04-06 |
| 10971362 | Extreme ultraviolet patterning process with resist hardening | Chanro Park, Ruilong Xie, Choonghyun Lee | 2021-04-06 |
| 10970046 | Random number generator compatible with complementary metal-oxide semiconductor technology | — | 2021-04-06 |
| 10964750 | Steep-switch field effect transistor with integrated bi-stable resistive system | Julien Frougier, Nicolas Loubet, Ruilong Xie, Daniel Chanemougame, Ali Razavieh | 2021-03-30 |
| 10964648 | Chip security fingerprint | Shawn P. Fetterolf, Chi-Chun Liu | 2021-03-30 |
| 10964602 | Fabrication of a pair of vertical fin field effect transistors having a merged top source/drain | Xin Miao, Wenyu Xu, Chen Zhang | 2021-03-30 |
| 10964601 | Fabrication of a pair of vertical fin field effect transistors having a merged top source/drain | Xin Miao, Wenyu Xu, Chen Zhang | 2021-03-30 |
| 10961120 | Nanoparticle structure and process for manufacture | Qing Cao, Juntao Li | 2021-03-30 |
| 10957799 | Transistor channel having vertically stacked nanosheets coupled by fin-shaped bridge regions | Ruilong Xie, Julien Frougier, Chanro Park, Edward J. Nowak, Yi Qi +1 more | 2021-03-23 |
| 10957798 | Nanosheet transistors with transverse strained channel regions | Xin Miao, Wenyu Xu, Chen Zhang | 2021-03-23 |
| 10957783 | Fin cut etch process for vertical transistor devices | Wenyu Xu, Chen Zhang, Xin Miao | 2021-03-23 |
| 10957778 | Formation of air gap spacers for reducing parasitic capacitance | Peng Xu, Choonghyun Lee, Heng Wu | 2021-03-23 |
| 10957698 | Reduction of multi-threshold voltage patterning damage in nanosheet device structure | Choonghyun Lee, Juntao Li, Shogo Mochizuki | 2021-03-23 |
| 10957693 | Vertical transistors with different gate lengths | Xin Miao, Chen Zhang, Juntao Li | 2021-03-23 |
| 10957601 | Self-aligned fin recesses in nanosheet field effect transistors | Zhenxing Bi, Wenyu Xu, Xin Miao | 2021-03-23 |
| 10957599 | Integrating extra gate VFET with single gate VFET | Zhenxing Bi, Junli Wang, Peng Xu | 2021-03-23 |
| 10957586 | FDSOI with on-chip physically unclonable function | Qing Cao, Zhengwen Li, Fei Liu | 2021-03-23 |