Issued Patents All Time
Showing 101–125 of 209 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11646306 | Co-integration of gate-all-around FET, FINFET and passive devices on bulk substrate | Veeraraghavan S. Basker, Andrew Gaul, Ruilong Xie | 2023-05-09 |
| 11621269 | Multi-level ferroelectric memory cell | Ruilong Xie | 2023-04-04 |
| 11605672 | Steep-switch field effect transistor with integrated bi-stable resistive system | Nicolas Loubet, Ruilong Xie, Daniel Chanemougame, Ali Razavieh, Kangguo Cheng | 2023-03-14 |
| 11605409 | MTJ-based analog memory device | Dimitri Houssameddine, Kangguo Cheng, Ruilong Xie | 2023-03-14 |
| 11569361 | Nanosheet transistors with wrap around contact | Ruilong Xie, Kangguo Cheng, Chanro Park | 2023-01-31 |
| 11527535 | Variable sheet forkFET device | Ruilong Xie, Kangguo Cheng, Chanro Park | 2022-12-13 |
| 11527446 | Transistor having strain-inducing anchors and a strain-enhancing suspended channel | Kangguo Cheng, Juntao Li, Ruilong Xie | 2022-12-13 |
| 11521894 | Partial wrap around top contact | Ruilong Xie, Ekmini Anuja De Silva, Eric Miller | 2022-12-06 |
| 11489009 | Integrating embedded memory on CMOS logic using thin film transistors | Heng Wu, Bruce B. Doris, Chen Zhang, Ruilong Xie | 2022-11-01 |
| 11482617 | Vertical transport field-effect transistor including replacement gate | Ruilong Xie, Chen Zhang, Kangguo Cheng | 2022-10-25 |
| 11444238 | Scalable heat sink and magnetic shielding for high density MRAM arrays | Ruilong Xie, Heng Wu, Chen Zhang, Bruce B. Doris | 2022-09-13 |
| 11435982 | True random number generation and physically unclonable functions using voltage control of magnetic anisotropy effects in STT-MRAM | Hemant Dixit, Bipul C. Paul, William J. Taylor, Jr. | 2022-09-06 |
| 11424367 | Wrap-around contacts including localized metal silicide | Eric R. Miller, Yann Mignot, Andrew M. Greene | 2022-08-23 |
| 11411048 | Magnetoresistive random-access memory device structure | Heng Wu, Alexander Reznicek, Ruilong Xie, Chen Zhang, Bruce B. Doris | 2022-08-09 |
| 11374167 | Reducing parasitic bottom electrode resistance of embedded MRAM | Ruilong Xie, Alexander Reznicek, Bruce B. Doris | 2022-06-28 |
| 11362177 | Epitaxial semiconductor material regions for transistor devices and methods of forming same | Arkadiusz Malinowski, Baofu Zhu, Frank W. Mont, Ali Razavieh | 2022-06-14 |
| 11309319 | Structures and SRAM bit cells integrating complementary field-effect transistors | Randy W. Mann, Bipul C. Paul, Ruilong Xie | 2022-04-19 |
| 11295988 | Semiconductor FET device with bottom isolation and high-κ first | Ruilong Xie, Jingyun Zhang, Alexander Reznicek, Takashi Ando | 2022-04-05 |
| 11282961 | Enhanced bottom dielectric isolation in gate-all-around devices | Andrew M. Greene, Ruilong Xie, Kangguo Cheng | 2022-03-22 |
| 11251362 | Stacked spin-orbit-torque magnetoresistive random-access memory | Heng Wu, Ruilong Xie, Chen Zhang | 2022-02-15 |
| 11227801 | Formation of contacts for semiconductor devices | Ruilong Xie, Su Chen Fan, Heng Wu | 2022-01-18 |
| 11217533 | Semiconductor device with metal structure under an active layer | Steven R. Soss, Steven Bentley | 2022-01-04 |
| 11205699 | Epitaxial semiconductor material regions for transistor devices and methods of forming same | Arkadiusz Malinowski, Baofu Zhu, Frank W. Mont, Ali Razavieh | 2021-12-21 |
| 11201152 | Method, apparatus, and system for fin-over-nanosheet complementary field-effect-transistor | Ruilong Xie, Steven R. Soss, Steven Bentley, Daniel Chanemougame, Bipul C. Paul +1 more | 2021-12-14 |
| 11195746 | Nanosheet transistor with self-aligned dielectric pillar | Ruilong Xie, Kangguo Cheng | 2021-12-07 |