Issued Patents All Time
Showing 151–175 of 209 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10903315 | Formation of dielectric layer as etch-stop for source and drain epitaxy disconnection | Nicolas Loubet, Robin Hsin Kuo Chao, Ruilong Xie | 2021-01-26 |
| 10886378 | Method of forming air-gap spacers and gate contact over active region and the resulting device | Ruilong Xie, Chanro Park, Kangguo Cheng | 2021-01-05 |
| 10872962 | Steep-switch field effect transistor with integrated bi-stable resistive system | Nicolas Loubet, Ruilong Xie, Daniel Chanemougame, Ali Razavieh, Kangguo Cheng | 2020-12-22 |
| 10840146 | Structures and SRAM bit cells with a buried cross-couple interconnect | Bipul C. Paul, Ruilong Xie | 2020-11-17 |
| 10833191 | Integrating nanosheet transistors, on-chip embedded memory, and extended-gate transistors on the same substrate | Ruilong Xie, Kangguo Cheng, Juntao Li | 2020-11-10 |
| 10832954 | Forming a reliable wrap-around contact without source/drain sacrificial regions | Kangguo Cheng, Ruilong Xie | 2020-11-10 |
| 10818803 | Fin-type field-effect transistors including a two-dimensional material | Ali Razavieh | 2020-10-27 |
| 10818792 | Nanosheet field-effect transistors formed with sacrificial spacers | Ruilong Xie, Daniel Chanemougame | 2020-10-27 |
| 10818674 | Structures and SRAM bit cells integrating complementary field-effect transistors | Randy W. Mann, Bipul C. Paul, Ruilong Xie | 2020-10-27 |
| 10804398 | Method of forming wrap-around-contact and the resulting device | Ruilong Xie | 2020-10-13 |
| 10790376 | Contact structures | Ruilong Xie, Chanro Park, Kangguo Cheng, Andre P. Labonte | 2020-09-29 |
| 10784171 | Vertically stacked complementary-FET device with independent gate control | Ruilong Xie, Puneet Harischandra Suvarna | 2020-09-22 |
| 10770566 | Unique gate cap and gate cap spacer structures for devices on integrated circuit products | Ruilong Xie, Chanro Park, Kangguo Cheng | 2020-09-08 |
| 10756203 | Sub-thermal switching slope vertical field effect transistor with dual-gate feedback loop mechanism | Ruilong Xie, Steven R. Bentley, Kangguo Cheng, Nicolas Loubet, Pietro Montanini | 2020-08-25 |
| 10741639 | Formation of dielectric layer as etch-stop for source and drain epitaxy disconnection | Nicolas Loubet, Robin Hsin Kuo Chao, Ruilong Xie | 2020-08-11 |
| 10741675 | Sub-thermal switching slope vertical field effect transistor with dual-gate feedback loop mechanism | Ruilong Xie, Steven R. Bentley, Kangguo Cheng, Nicolas Loubet, Pietro Montanini | 2020-08-11 |
| 10734525 | Gate-all-around transistor with spacer support and methods of forming same | Ruilong Xie, Christopher M. Prindle, Nigel G. Cave | 2020-08-04 |
| 10714567 | Nanosheet field-effect transistor with substrate isolation | Ruilong Xie | 2020-07-14 |
| 10692991 | Gate-all-around field effect transistors with air-gap inner spacers and methods | Daniel Chanemougame, Ruilong Xie | 2020-06-23 |
| 10679894 | Airgap spacers formed in conjunction with a late gate cut | Ruilong Xie, Chanro Park, Kangguo Cheng | 2020-06-09 |
| 10665692 | Non-self aligned gate contacts formed over the active region of a transistor | Ruilong Xie, Chanro Park, Kangguo Cheng | 2020-05-26 |
| 10665669 | Insulative structure with diffusion break integral with isolation layer and methods to form same | Ruilong Xie | 2020-05-26 |
| 10651291 | Inner spacer formation in a nanosheet field-effect transistor | Ruilong Xie | 2020-05-12 |
| 10644157 | Fin-type field effect transistors with uniform channel lengths and below-channel isolation on bulk semiconductor substrates and methods | Ruilong Xie, Andreas Knorr, Srikanth B. Samavedam | 2020-05-05 |
| 10629516 | Hybrid dual damascene structures with enlarged contacts | Daniel Chanemougame, Ruilong Xie | 2020-04-21 |