Issued Patents All Time
Showing 176–200 of 209 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10608082 | Field-effect transistors including multiple gate lengths | Ruilong Xie | 2020-03-31 |
| 10586856 | Nanosheet FET device with epitaxial nucleation | Nicolas Loubet, Wenyu Xu, Zhenxing Bi | 2020-03-10 |
| 10580692 | Integration of air spacer with self-aligned contact in transistor | Chanro Park, Ruilong Xie, Kangguo Cheng | 2020-03-03 |
| 10573755 | Nanosheet FET with box isolation on substrate | Kangguo Cheng, Nicolas Loubet, Ruilong Xie | 2020-02-25 |
| 10566436 | Steep-switch field effect transistor with integrated bi-stable resistive system | Nicolas Loubet, Ruilong Xie, Daniel Chanemougame, Ali Razavieh, Kangguo Cheng | 2020-02-18 |
| 10559656 | Wrap-all-around contact for nanosheet-FET and method of forming same | Emilie Bourjot, Yi Qi, Ruilong Xie, Hui Zang, Hsien-Ching Lo +1 more | 2020-02-11 |
| 10553705 | Sub-thermal switching slope vertical field effect transistor with dual-gate feedback loop mechanism | Ruilong Xie, Steven R. Bentley, Kangguo Cheng, Nicolas Loubet, Pietro Montanini | 2020-02-04 |
| 10546945 | Sub-thermal switching slope vertical field effect transistor with dual-gate feedback loop mechanism | Ruilong Xie, Steven R. Bentley, Kangguo Cheng, Nicolas Loubet, Pietro Montanini | 2020-01-28 |
| 10541272 | Steep-switch vertical field effect transistor | Daniel Chanemougame, Nicolas Loubet, Ruilong Xie | 2020-01-21 |
| 10529826 | Forming self-aligned gate and source/drain contacts using sacrificial gate cap spacer and resulting devices | Ruilong Xie, Chanro Park, Kangguo Cheng | 2020-01-07 |
| 10510622 | Vertically stacked complementary-FET device with independent gate control | Ruilong Xie, Puneet Harischandra Suvarna | 2019-12-17 |
| 10510620 | Work function metal patterning for N-P space between active nanostructures | Daniel Chanemougame, Steven R. Soss, Steven Bentley, Ruilong Xie | 2019-12-17 |
| 10475899 | Method of forming gate-all-around (GAA) FinFET and GAA FinFET formed thereby | Ruilong Xie, Andreas Knorr, Hui Zang, Min-hwa Chi | 2019-11-12 |
| 10431663 | Method of forming integrated circuit with gate-all-around field effect transistor and the resulting structure | Ruilong Xie, Balasubramanian Pranatharthiharan, Pietro Montanini | 2019-10-01 |
| 10424651 | Forming nanosheet transistor using sacrificial spacer and inner spacers | Kangguo Cheng, Nicolas Loubet | 2019-09-24 |
| 10418484 | Vertical field effect transistors incorporating U-shaped semiconductor bodies and methods | Ruilong Xie, Lars Liebmann, Edward J. Nowak, Jia Zeng | 2019-09-17 |
| 10388732 | Nanosheet field-effect transistors including a two-dimensional semiconducting material | Ruilong Xie, Nicolas Loubet, Kangguo Cheng, Juntao Li | 2019-08-20 |
| 10388760 | Sub-thermal switching slope vertical field effect transistor with dual-gate feedback loop mechanism | Ruilong Xie, Steven R. Bentley, Kangguo Cheng, Nicolas Loubet, Pietro Montanini | 2019-08-20 |
| 10381459 | Transistors with H-shaped or U-shaped channels and method for forming the same | Ruilong Xie, Yi Qi, Nigel G. Cave, Edward J. Nowak, Andreas Knorr | 2019-08-13 |
| 10332803 | Hybrid gate-all-around (GAA) field effect transistor (FET) structure and method of forming | Ruilong Xie, Edward J. Nowak, Bipul C. Paul, Steven R. Soss, Daniel Chanemougame +1 more | 2019-06-25 |
| 10290549 | Integrated circuit structure, gate all-around integrated circuit structure and methods of forming same | Ruilong Xie, Min Gyu Sung, Edward J. Nowak, Nigel G. Cave, Lars Liebmann +2 more | 2019-05-14 |
| 10276442 | Wrap-around contacts formed with multiple silicide layers | Ruilong Xie, Kangguo Cheng, Adra Carr, Nicolas Loubet | 2019-04-30 |
| 10269983 | Stacked nanosheet field-effect transistor with air gap spacers | Ruilong Xie, Hui Zang, Kangguo Cheng, Tenko Yamashita, Chun-Chen Yeh | 2019-04-23 |
| 10256158 | Insulated epitaxial structures in nanosheet complementary field effect transistors | Ruilong Xie, Steven Bentley, Puneet Harischandra Suvarna | 2019-04-09 |
| 10256316 | Steep-switch field effect transistor with integrated bi-stable resistive system | Nicolas Loubet, Ruilong Xie, Daniel Chanemougame, Ali Razavieh, Kangguo Cheng | 2019-04-09 |