Issued Patents All Time
Showing 201–209 of 209 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10236218 | Methods, apparatus and system for forming wrap-around contact with dual silicide | Ruilong Xie, Hiroaki Niimi, Nigel G. Cave, Xusheng Wu | 2019-03-19 |
| 10236379 | Vertical FET with self-aligned source/drain regions and gate length based on channel epitaxial growth process | Steven Bentley, Puneet Harischandra Suvarna, Bartlomiej Jan Pawlak | 2019-03-19 |
| 10236292 | Complementary FETs with wrap around contacts and methods of forming same | Ruilong Xie, Puneet Harischandra Suvarna, Hiroaki Niimi, Steven Bentley, Ali Razavieh | 2019-03-19 |
| 10192867 | Complementary FETs with wrap around contacts and method of forming same | Ruilong Xie, Puneet Harischandra Suvarna, Hiroaki Niimi, Steven Bentley, Ali Razavieh | 2019-01-29 |
| 10170520 | Negative-capacitance steep-switch field effect transistor with integrated bi-stable resistive system | Nicolas Loubet, Ruilong Xie, Daniel Chanemougame, Ali Razavieh, Kangguo Cheng | 2019-01-01 |
| 10164041 | Method of forming gate-all-around (GAA) FinFET and GAA FinFET formed thereby | Ruilong Xie, Andreas Knorr, Hui Zang, Min-hwa Chi | 2018-12-25 |
| 10014390 | Inner spacer formation for nanosheet field-effect transistors with tall suspensions | Guillaume Bouche, Ruilong Xie | 2018-07-03 |
| 9991352 | Methods of forming a nano-sheet transistor device with a thicker gate stack and the resulting device | Ali Razavieh, Ruilong Xie, Steven Bentley | 2018-06-05 |
| 9947804 | Methods of forming nanosheet transistor with dielectric isolation of source-drain regions and related structure | Min Gyu Sung, Ruilong Xie, Chanro Park, Steven Bentley | 2018-04-17 |