Issued Patents All Time
Showing 451–475 of 496 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8673729 | finFET eDRAM strap connection structure | Veeraraghavan S. Basker, Tenko Yamashita, Chun-Chen Yeh | 2014-03-18 |
| 8637381 | High-k dielectric and silicon nitride box region | Dae-Gyu Park, Shom Ponoth, Zhibin Ren, Ghavam G. Shahidi, Leathen Shi | 2014-01-28 |
| 8637931 | finFET with merged fins and vertical silicide | Veeraraghavan S. Basker, Andres Bryant, Huiming Bu, Wilfried E. Haensch, Chung-Hsun Lin +3 more | 2014-01-28 |
| 8586449 | Raised isolation structure self-aligned to fin structures | Josephine B. Chang, Paul Chang, Michael A. Guillorn | 2013-11-19 |
| 8557657 | Retrograde substrate for deep trench capacitors | Veeraraghavan S. Basker, Wilfried E. Haensch, Tenko Yamashita, Chun-Chen Yeh | 2013-10-15 |
| 8513085 | Structure and method to improve threshold voltage of MOSFETs including a high k dielectric | Sunfei Fang, Brian J. Greene, Qingqing Liang, Edward P. Maciejewski, Yanfeng Wang | 2013-08-20 |
| 8492228 | Field effect transistor devices having thick gate dielectric layers and thin gate dielectric layers | Junli Wang | 2013-07-23 |
| 8455313 | Method for fabricating finFET with merged fins and vertical silicide | Veeraraghavan S. Basker, Andres Bryant, Huiming Bu, Wilfried E. Haensch, Chung-Hsun Lin +3 more | 2013-06-04 |
| 8445334 | SOI FinFET with recessed merged Fins and liner for enhanced stress coupling | Veeraraghavan S. Basker, Huiming Bu, Theodorus E. Standaert, Tenko Yamashita, Chun-Chen Yeh | 2013-05-21 |
| 8188574 | Pedestal guard ring having continuous M1 metal barrier connected to crack stop | Matthew S. Angyal, Mahender Kumar, Jay William Strane | 2012-05-29 |
| 8173531 | Structure and method to improve threshold voltage of MOSFETS including a high K dielectric | Sunfei Fang, Brian J. Greene, Qingqing Liang, Edward P. Maciejewski, Yanfeng Wang | 2012-05-08 |
| 8138497 | Test structure for detecting via contact shorting in shallow trench isolation regions | Huilong Zhu, Shih-Fen Huang | 2012-03-20 |
| 7723750 | MOSFET with super-steep retrograded island | Huilong Zhu, Anda C. Mocuta, Dan M. Mocuta | 2010-05-25 |
| 7592245 | Poly filled substrate contact on SOI structure | David M. Dobuzinsky, Byeong Y. Kim, Munir D. Naeem, Brian L. Tessier | 2009-09-22 |
| 7569892 | Method and structure for forming self-aligned, dual stress liner for CMOS devices | Huilong Zhu, Huicai Zhong | 2009-08-04 |
| 7485510 | Field effect device including inverted V shaped channel region and method for fabrication thereof | Huilong Zhu, Ravikumar Ramachandran, Mahender Kumar, Wenjuan Zhu, Christine Norris | 2009-02-03 |
| 7442993 | Ultra-thin, high quality strained silicon-on-insulator formed by elastic strain transfer | Stephen W. Bedell, Anthony G. Domenicucci, Keith E. Fogel, Devendra K. Sadana | 2008-10-28 |
| 7416986 | Test structure and method for detecting via contact shorting in shallow trench isolation regions | Huilong Zhu, Shih-Fen Huang | 2008-08-26 |
| 7358172 | Poly filled substrate contact on SOI structure | David M. Dobuzinsky, Byeong Y. Kim, Munir D. Naeem, Brian L. Tessier | 2008-04-15 |
| 7354806 | Semiconductor device structure with active regions having different surface directions and methods | Bruce B. Doris, Oleg Gluschenkov, Meikei Ieong, Huilong Zhu | 2008-04-08 |
| 7288451 | Method and structure for forming self-aligned, dual stress liner for CMOS devices | Huilong Zhu, Huicai Zhong | 2007-10-30 |
| 7268049 | Structure and method for manufacturing MOSFET with super-steep retrograded island | Huilong Zhu, Anda C. Mocuta, Dan M. Mocuta | 2007-09-11 |
| 7183573 | Disposable spacer for symmetric and asymmetric Schottky contact to SOI mosfet | Andres Bryant, Jerome B. Lasky, Dominic J. Schepis | 2007-02-27 |
| 6991998 | Ultra-thin, high quality strained silicon-on-insulator formed by elastic strain transfer | Stephen W. Bedell, Anthony G. Domenicucci, Keith E. Fogel, Devendra K. Sadana | 2006-01-31 |
| 6881635 | Strained silicon NMOS devices with embedded source/drain | Dureseti Chidambarrao, Anda C. Mocuta, Haining Yang, Huilong Zhu | 2005-04-19 |