Issued Patents All Time
Showing 151–174 of 174 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6987050 | Self-aligned silicide (salicide) process for low resistivity contacts to thin film silicon-on-insulator and bulk MOSFETS and for shallow junctions | Cyril Cabral, Jr., Kevin K. Chan, Guy M. Cohen, Ronnen Andrew Roy, Paul M. Solomon | 2006-01-17 |
| 6972250 | Method and structure for ultra-low contact resistance CMOS formed by vertically self-aligned CoSi2 on raised source drain Si/SiGe device | Cyril Cabral, Jr., Roy A. Carruthers, Kevin K. Chan, Jack O. Chu, Guy M. Cohen +2 more | 2005-12-06 |
| 6927117 | Method for integration of silicide contacts and silicide gate metals | Cyril Cabral, Jr., Jakub Kedzierski, Victor Ku, Vijay Narayanan, An Steegen | 2005-08-09 |
| 6916729 | Salicide formation method | Sunfei Fang, Keith Kwong Hon Wong, Paul D. Agnello, Lawrence A. Clevenger, Chester T. Dziobkowski +4 more | 2005-07-12 |
| 6905560 | Retarding agglomeration of Ni monosilicide using Ni alloys | Cyril Cabral, Jr., Roy A. Carruthers, Christophe Detavernier, James M. E. Harper | 2005-06-14 |
| 6878624 | Pre-anneal of CoSi, to prevent formation of amorphous layer between Ti-O-N and CoSi | John Bruley, Cyril Cabral, Jr., Tina Wagner, Yun-Yu Wang, Horati S. Wildman +1 more | 2005-04-12 |
| 6809030 | Method and structure for controlling the interface roughness of cobalt disilicide | Paul D. Agnello, Cyril Cabral, Jr., Roy A. Carruthers, James M. E. Harper, Kirk D. Peterson +4 more | 2004-10-26 |
| 6777298 | Elevated source drain disposable spacer CMOS | Ronnen Andrew Roy, Cyril Cabral, Jr., Kam-Leung Lee | 2004-08-17 |
| 6753606 | Method and structure for reduction of contact resistance of metal silicides using a metal-germanium alloy | Cyril Cabral, Jr., Roy A. Carruthers, James M. E. Harper, Ronnen Andrew Roy, Yun-Yu Wang | 2004-06-22 |
| 6716708 | Self-aligned silicide process utilizing ion implants for reduced silicon consumption and control of the silicide formation temperature and structure formed thereby | Cyril Cabral, Jr., Kevin K. Chan, Guy M. Cohen, Kathryn Guarini, Ronnen Andrew Roy +1 more | 2004-04-06 |
| 6690072 | Method and structure for ultra-low contact resistance CMOS formed by vertically self-aligned CoSi2 on raised source drain Si/SiGe device | Cyril Cabral, Jr., Roy A. Carruthers, Kevin K. Chan, Jack O. Chu, Guy M. Cohen +2 more | 2004-02-10 |
| 6645861 | Self-aligned silicide process for silicon sidewall source and drain contacts | Cyril Cabral, Jr., Kevin K. Chan, Guy M. Cohen, Kathryn Guarini, Paul M. Solomon +1 more | 2003-11-11 |
| 6555880 | Self-aligned silicide process utilizing ion implants for reduced silicon consumption and control of the silicide formation temperature and structure formed thereby | Cyril Cabral, Jr., Kevin K. Chan, Guy M. Cohen, Kathryn Guarini, Ronnen Andrew Roy +1 more | 2003-04-29 |
| 6503833 | Self-aligned silicide (salicide) process for strained silicon MOSFET ON SiGe and structure formed thereby | Atul Ajmera, Cyril Cabral, Jr., Roy A. Carruthers, Kevin K. Chan, Guy M. Cohen +3 more | 2003-01-07 |
| 6448131 | Method for increasing the capacitance of a trench capacitor | Cyril Cabral, Jr., Kevin K. Chan, Guy M. Cohen, Ramachandra Divakaruni, Fenton R. McFeely | 2002-09-10 |
| 6444578 | Self-aligned silicide process for reduction of Si consumption in shallow junction and thin SOI electronic devices | Cyril Cabral, Jr., Roy A. Carruthers, Kevin K. Chan, Guy M. Cohen, Kathryn Guarini +2 more | 2002-09-03 |
| 6440851 | Method and structure for controlling the interface roughness of cobalt disilicide | Paul D. Agnello, Cyril Cabral, Jr., Roy A. Carruthers, James M. E. Harper, Kirk D. Peterson +4 more | 2002-08-27 |
| 6436823 | Method for forming a TiN layer on top of a metal silicide layer in a semiconductor structure and structure formed | Cyril Cabral, Jr., Chung-Ping Eng, Lynne M. Gignac, Patricia A. O'Neil, Kirk D. Peterson +3 more | 2002-08-20 |
| 6417567 | Flat interface for a metal-silicon contract barrier film | Anthony G. Domenicucci, Lynne M. Gignac, Yun-Yu Wang, Horatio S. Wildman, Kwong Hon Wong +2 more | 2002-07-09 |
| 6413859 | Method and structure for retarding high temperature agglomeration of silicides using alloys | Cyril Cabral, Jr., Roy A. Carruthers, James M. E. Harper, Paul Kozlowski, Joseph S. Newbury +1 more | 2002-07-02 |
| 6331486 | Method and structure for reduction of contact resistance of metal silicides using a metal-germanium alloy | Cyril Cabral, Jr., Roy A. Carruthers, James M. E. Harper, Ronnen Andrew Roy, Yun-Yu Wang | 2001-12-18 |
| 6323130 | Method for self-aligned formation of silicide contacts using metal silicon alloys for limited silicon consumption and for reduction of bridging | Stephen Bruce Brodsky, Cyril Cabral, Jr., Roy A. Carruthers, James M. E. Harper, Patricia A. O'Neil +1 more | 2001-11-27 |
| 5568978 | Optical apparatus and method for measuring temperature of a substrate material with a temperature dependent band gap | Shane R. Johnson, Mark K. Nissen, J. Thomas Tiedje | 1996-10-29 |
| 5388909 | Optical apparatus and method for measuring temperature of a substrate material with a temperature dependent band gap | Shane R. Johnson, Mark K. Nissen, J. Thomas Tiedje | 1995-02-14 |