SB

Stephen Bruce Brodsky

IBM: 13 patents #8,581 of 70,183Top 15%
Applied Materials: 1 patents #4,780 of 7,310Top 70%
Overall (All Time): #388,542 of 4,157,543Top 10%
13
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
6838364 Sputtered tungsten diffusion barrier for improved interconnect robustness William J. Murphy, Matthew J. Rutten, David C. Strippe, Daniel S. Vanslette 2005-01-04
6440808 Damascene-gate process for the fabrication of MOSFET devices with minimum poly-gate depletion, silicided source and drain junctions, and low sheet resistance gate-poly Diane C. Boyd, Hussein I. Hanafi, Ronnen Andrew Roy 2002-08-27
6388327 Capping layer for improved silicide formation in narrow semiconductor structures Kenneth J. Giewont, Cyril Cabral, Jr., Anthony G. Domenicucci, Craig Ransom, Yun-Yu Wang +2 more 2002-05-14
6323130 Method for self-aligned formation of silicide contacts using metal silicon alloys for limited silicon consumption and for reduction of bridging Cyril Cabral, Jr., Roy A. Carruthers, James M. E. Harper, Christian Lavoie, Patricia A. O'Neil +1 more 2001-11-27
6245668 Sputtered tungsten diffusion barrier for improved interconnect robustness William J. Murphy, Matthew J. Rutten, David C. Strippe, Daniel S. Vanslette 2001-06-12
6114736 Controlled dopant diffusion and metal contamination in thin polycide gate conductor of MOSFET device Karanam Balasubramanyam, Richard A. Conti, Badih El-Kareh 2000-09-05
6049131 Device formed by selective deposition of refractory metal of less than 300 Angstroms of thickness Richard A. Conti, Seshadri Subbanna 2000-04-11
5923999 Method of controlling dopant diffusion and metal contamination in thin polycide gate conductor of mosfet device Karanam Balasubramanyam, Richard A. Conti, Badih El-Kareh 1999-07-13
5807788 Method for selective deposition of refractory metal and device formed thereby Richard A. Conti, Seshadri Subbanna 1998-09-15
5690795 Screwless shield assembly for vacuum processing chambers Michael Rosenstein, Howard Grunes 1997-11-25
5086016 Method of making semiconductor device contact including transition metal-compound dopant source Rajiv V. Joshi, John S. Lechaton, James G. Ryan, Dominic J. Schepis 1992-02-04
4974056 Stacked metal silicide gate structure with barrier Dan Moy, Rajiv V. Joshi 1990-11-27
4803110 Coated mask for photolithographic construction of electric circuits Kie Y. Ahn, Saryadevara Basavaiah, Charles A. Cortellino, Joseph E. Levine 1989-02-07