Issued Patents All Time
Showing 126–150 of 174 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7538029 | Method of room temperature growth of SiOx on silicide as an etch stop layer for metal contact open of semiconductor devices | Yun-Yu Wang, Kevin E. Mello, Conal E. Murray, Matthew Oonk | 2009-05-26 |
| 7528067 | MOSFET structure with multiple self-aligned silicide contacts | Kevin K. Chan, Kern Rim | 2009-05-05 |
| 7517795 | Stabilization of Ni monosilicide thin films in CMOS devices using implantation of ions before silicidation | Roy A. Carruthers, Cedrik Y. Cole, Christophe Detavernier, Kenneth P. Rodbell | 2009-04-14 |
| 7501345 | Selective silicide formation by electrodeposit displacement reaction | Veeraraghaven S. Basker, Hariklia Deligianni, Balasubramanian S. Pranatharthi Haran, James J. Kelly, George G. Totir | 2009-03-10 |
| 7498254 | Plating seed layer including an oxygen/nitrogen transition region for barrier enhancement | Chih-Chao Yang, Simon Gaudet, Shom Ponoth, Terry A. Spooner | 2009-03-03 |
| 7498640 | Self-aligned silicide process for silicon sidewall source and drain contacts and structure formed thereby | Cyril Cabral, Jr., Kevin K. Chan, Guy M. Cohen, Kathryn Guarini, Paul M. Solomon +1 more | 2009-03-03 |
| 7491643 | Method and structure for reducing contact resistance between silicide contact and overlying metallization | Conal E. Murray, Kenneth P. Rodbell | 2009-02-17 |
| 7449782 | Self-aligned metal to form contacts to Ge containing substrates and structure formed thereby | Cyril Cabral, Jr., Roy A. Carruthers, Christophe Detavernier, Simon Gaudet, Huiling Shang | 2008-11-11 |
| 7419907 | Eliminating metal-rich silicides using an amorphous Ni alloy silicide structure | Christophe Detavernier, Simon Gaudet, Conal E. Murray | 2008-09-02 |
| 7410852 | Opto-thermal annealing methods for forming metal gate and fully silicided gate field effect transistors | Scott D. Allen, Cyril Cabral, Jr., Kevin K. Dezfulian, Sunfei Fang, Brian J. Greene +6 more | 2008-08-12 |
| 7384868 | Reduction of silicide formation temperature on SiGe containing substrates | Cyril Cabral, Jr., Roy A. Carruthers, Jia Chen, Christophe Detavernier, James M. E. Harper | 2008-06-10 |
| 7271486 | Retarding agglomeration of Ni monosilicide using Ni alloys | Cyril Cabral, Jr., Roy A. Carruthers, Christophe Detavernier, James M. E. Harper | 2007-09-18 |
| 7215006 | Plating seed layer including an oxygen/nitrogen transition region for barrier enhancement | Chih-Chao Yang, Simon Gaudet, Shom Ponoth, Terry A. Spooner | 2007-05-08 |
| 7208414 | Method for enhanced uni-directional diffusion of metal and subsequent silicide formation | Anthony G. Domenicucci, Bradley P. Jones, Robert J. Purtell, Yun-Yu Wang, Kwong Hon Wong | 2007-04-24 |
| 7129548 | MOSFET structure with multiple self-aligned silicide contacts | Kevin K. Chan, Kern Rim | 2006-10-31 |
| 7129169 | Method for controlling voiding and bridging in silicide formation | Bradley P. Jones, Robert J. Purtell, Yun-Yu Wang, Keith Kwong Hon Wong | 2006-10-31 |
| 7122472 | Method for forming self-aligned dual fully silicided gates in CMOS devices | Sunfei Fang, Cyril Cabral, Jr., Chester T. Dziobkowski, Clement Wann | 2006-10-17 |
| 7119012 | Stabilization of Ni monosilicide thin films in CMOS devices using implantation of ions before silicidation | Roy A. Carruthers, CEDRIK COIA, Christophe Detavernier, Kenneth P. Rodbell | 2006-10-10 |
| 7112481 | Method for forming self-aligned dual salicide in CMOS technologies | Sunfei Fang, Cyril Cabral, Jr., Chester T. Dziobkowski, John J. Ellis-Monaghan, Zhijiong Luo +3 more | 2006-09-26 |
| 7102234 | Method and structure for reduction of contact resistance of metal silicides using a metal-germanium alloy | Cyril Cabral, Jr., Roy A. Carruthers, James M. E. Harper, Ronnen Andrew Roy, Yun-Yu Wang | 2006-09-05 |
| 7081676 | Structure for controlling the interface roughness of cobalt disilicide | Paul D. Agnello, Cyril Cabral, Jr., Roy A. Carruthers, James M. E. Harper, Kirk D. Peterson +4 more | 2006-07-25 |
| 7074684 | Elevated source drain disposable spacer CMOS | Ronnen Andrew Roy, Cyril Cabral, Jr., Kam-Leung Lee | 2006-07-11 |
| 7067368 | Method for forming self-aligned dual salicide in CMOS technologies | Sunfei Fang, Cyril Cabral, Jr., Chester T. Dziobkowski, John J. Ellis-Monaghan, Zhijiong Luo +3 more | 2006-06-27 |
| 7064025 | Method for forming self-aligned dual salicide in CMOS technologies | Sunfei Fang, Cyril Cabral, Jr., Chester T. Dziobkowski, John J. Ellis-Monaghan, Zhijiong Luo +3 more | 2006-06-20 |
| 6989322 | Method of forming ultra-thin silicidation-stop extensions in mosfet devices | Oleg Gluschenkov, Cyril Cabral, Jr., Omer H. Dokumaci | 2006-01-24 |