Issued Patents All Time
Showing 76–100 of 174 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8652963 | MOSFET integrated circuit with uniformly thin silicide layer and methods for its manufacture | Bin Yang, Emre Alptekin, Ahmet S. Ozcan, Cung D. Tran, Mark V. Raymond | 2014-02-18 |
| 8614107 | Liner-free tungsten contact | Ahmet S. Ozcan, Filippos Papadatos | 2013-12-24 |
| 8614106 | Liner-free tungsten contact | Ahmet S. Ozcan, Filippos Papadatos | 2013-12-24 |
| 8592308 | Silicided device with shallow impurity regions at interface between silicide and stressed liner | Javier Ayala, Ahmet S. Ozcan | 2013-11-26 |
| 8541835 | Schottky FET fabricated with gate last process | Jin Cai, Dechao Guo, Marwan H. Khater, Zhen Zhang | 2013-09-24 |
| 8513122 | Method and structure for differential silicide and recessed or raised source/drain to improve field effect transistor | Viorel Ontalus, Ahmet S. Ozcan | 2013-08-20 |
| 8492899 | Method to electrodeposit nickel on silicon for forming controllable nickel silicide | Cyril Cabral, Jr., John M. Cotte, Kathryn C. Fisher, Laura L. Kosbar, Zhu Liu +1 more | 2013-07-23 |
| 8492854 | Integrated circuit having raised source drains devices with reduced silicide contact resistance and methods to fabricate same | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Pranita Kulkarni | 2013-07-23 |
| 8482084 | SOI schottky source/drain device structure to control encroachment and delamination of silicide | Marwan H. Khater, Bin Yang, Zhen Zhang | 2013-07-09 |
| 8482076 | Method and structure for differential silicide and recessed or raised source/drain to improve field effect transistor | Viorel Ontalus, Ahmet S. Ozcan | 2013-07-09 |
| 8456011 | Method to control metal semiconductor micro-structure | Ahmet S. Ozcan, Zhen Zhang, Bin Yang | 2013-06-04 |
| 8420469 | Schottky FET fabricated with gate last process | Jin Cai, Dechao Guo, Marwan H. Khater, Zhen Zhang | 2013-04-16 |
| 8415748 | Use of epitaxial Ni silicide | Marwan H. Khater, Bin Yang, Zhen Zhang | 2013-04-09 |
| 8404589 | Silicide contact formation | Andrew J. Kellock, Ahmet S. Ozcan, Stephen M. Rossnagel, Bin Yang, Zhen Zhang +2 more | 2013-03-26 |
| 8349716 | Semiconductor device with reduced junction leakage and an associated method of forming such a semiconductor device | Ming Cai, Ahmet S. Ozcan, Bin Yang, Zhen Zhang | 2013-01-08 |
| 8314500 | Interconnections for flip-chip using lead-free solders and having improved reaction barrier layers | Luc Belanger, Stephen L. Buchwalter, Leena Paivikki Buchwalter, Ajay P. Giri, Jonathan H. Griffith +8 more | 2012-11-20 |
| 8293643 | Method and structure of forming silicide and diffusion barrier layer with direct deposited film on silicon | Cyril Cabral, Jr., John M. Cotte, Kathryn C. Fisher, Laura L. Kosbar, Zhu Liu +2 more | 2012-10-23 |
| 8278200 | Metal-semiconductor intermixed regions | Tak H. Ning, Ahmet S. Ozcan, Bin Yang, Zhen Zhang | 2012-10-02 |
| 8247319 | Method to enable the process and enlarge the process window for silicide, germanide or germanosilicide formation in structures with extremely small dimensions | Benjamin L. Fletcher, Siegfried Maurer, Zhen Zhang | 2012-08-21 |
| 8242485 | Source/drain technology for the carbon nano-tube/graphene CMOS with a single self-aligned metal silicide process | Josephine B. Chang, Zhen Zhang | 2012-08-14 |
| 8241981 | Method of fabricating a deep trench (DT) metal-insulator-metal (MIM) capacitor | Rishikesh Krishnan, Joseph F. Shepard, Jr., Michael P. Chudzik, Dong-Ick Lee, Oh-Jung Kwon +2 more | 2012-08-14 |
| 8168503 | Method for forming an SOI schottky source/drain device to control encroachment and delamination of silicide | Marwan H. Khater, Bin Yang, Zhen Zhang | 2012-05-01 |
| 8154130 | Self-aligned metal to form contacts to Ge containing substrates and structure formed thereby | Cyril Cabral, Jr., Roy A. Carruthers, Christophe Detavernier, Simon Gaudet, Huiling Shang | 2012-04-10 |
| 8125082 | Reduction of silicide formation temperature on SiGe containing substrates | Cyril Cabral, Jr., Roy A. Carruthers, Jia Chen, Christopher G. M. M. Detavernier, James M. E. Harper | 2012-02-28 |
| 8119466 | Self-aligned process for nanotube/nanowire FETs | Phaedon Avouris, Roy A. Carruthers, Jia Chen, Christopher G. M. M. Detavernier, Hon-Sum Philip Wong | 2012-02-21 |