Issued Patents All Time
Showing 51–75 of 174 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9041151 | Fin eFuse formed by trench silicide process | Effendi Leobandung, Dan Moy | 2015-05-26 |
| 9018714 | Integrated circuit having raised source drains devices with reduced silicide contact resistance and methods to fabricate same | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Pranita Kerber | 2015-04-28 |
| 9006801 | Method for forming metal semiconductor alloys in contact holes and trenches | Zhengwen Li, Ahmet S. Ozcan, Filippos Papadatos, Chengwen Pei, Jian-Shen Yu | 2015-04-14 |
| 8987135 | Method to control metal semiconductor micro-structure | Ahmet S. Ozcan, Zhen Zhang, Bin Yang | 2015-03-24 |
| 8981565 | Techniques to form uniform and stable silicide | Dong-Ick Lee, Ahmet S. Ozcan, Zhen Zhang | 2015-03-17 |
| 8962412 | Integrated circuit having raised source drains devices with reduced silicide contact resistance and methods to fabricate same | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Pranita Kerber | 2015-02-24 |
| 8936978 | Multigate structure formed with electroless metal deposition | Wilfried E. Haensch, Christine Qiqing Ouyang, Xiaoyan Shao, Paul M. Solomon, Zhen Zhang +1 more | 2015-01-20 |
| 8927057 | Graphene formation utilizing solid phase carbon sources | Ageeth A. Bol, Roy A. Carruthers, Jack O. Chu, Alfred Grill, Katherine L. Saenger +1 more | 2015-01-06 |
| 8927422 | Raised silicide contact | Emre Alptekin, Nathaniel Berliner, Kam-Leung Lee, Ahmet S. Ozcan | 2015-01-06 |
| 8895379 | Integrated circuit having raised source drains devices with reduced silicide contact resistance and methods to fabricate same | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Pranita Kulkarni | 2014-11-25 |
| 8889537 | Implantless dopant segregation for silicide contacts | Cryil Cabral, Jr., John M. Cotte, Dinesh R. Koli, Laura L. Kosbar, Mahadevaiyer Krishnan +2 more | 2014-11-18 |
| 8878311 | Integrated circuit having raised source drains devices with reduced silicide contact resistance and methods to fabricate same | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Pranita Kerber | 2014-11-04 |
| 8859316 | Schottky junction si nanowire field-effect bio-sensor/molecule detector | Dechao Guo, Christine Ouyang Qiqing, Yanning Sun, Zhen Zhang | 2014-10-14 |
| 8841652 | Self aligned carbide source/drain FET | Cyril Cabral, Jr., Josephine B. Chang, Alfred Grill, Michael A. Guillorn, Eugene J. O'Sullivan | 2014-09-23 |
| 8836048 | Field effect transistor device having a hybrid metal gate stack | Cyril Cabral, Jr., Josephine B. Chang, Michael P. Chudzik, Martin M. Frank, Michael A. Guillorn +2 more | 2014-09-16 |
| 8835309 | Forming nickel—platinum alloy self-aligned silicide contacts | David F. Hilscher, Ahmet S. Ozcan | 2014-09-16 |
| 8796784 | Devices and methods to optimize materials and properties for replacement metal gate structures | Takashi Ando, Vijay Narayanan | 2014-08-05 |
| 8791572 | Buried metal-semiconductor alloy layers and structures and methods for fabrication thereof | Francois Pagette, Anna W. Topol | 2014-07-29 |
| 8785322 | Devices and methods to optimize materials and properties for replacement metal gate structures | Takashi Ando, Vijay Narayanan | 2014-07-22 |
| 8772161 | Annealing copper interconnects | Cyril Cabral, Jr., Gregory M. Fritz, Conal E. Murray, Kenneth P. Rodbell | 2014-07-08 |
| 8759213 | Buried metal-semiconductor alloy layers and structures and methods for fabrication thereof | Francois Pagette, Anna W. Topol | 2014-06-24 |
| 8741753 | Use of band edge gate metals as source drain contacts | Kisik Choi, Paul M. Solomon, Bin Yang, Zhen Zhang | 2014-06-03 |
| 8664721 | FET with FUSI gate and reduced source/drain contact resistance | Tak H. Ning, Qiqing C. Ouyang, Paul M. Solomon, Zhen Zhang | 2014-03-04 |
| 8658530 | Method of fabricating an epitaxial Ni silicide film | Marwan H. Khater, Bin Yang, Zhen Zhang | 2014-02-25 |
| 8658461 | Self aligned carbide source/drain FET | Cyril Cabral, Jr., Josephine B. Chang, Alfred Grill, Michael A. Guillorn, Eugene J. O'Sullivan | 2014-02-25 |