Issued Patents All Time
Showing 26–50 of 61 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7211144 | Pulsed nucleation deposition of tungsten layers | Xinliang Lu, Ping Jian, Jong Hyun Yoo, Ken Kaung Lai, Robert Jackson +1 more | 2007-05-01 |
| 7208413 | Formation of boride barrier layers using chemisorption techniques | Jeong Soo Byun | 2007-04-24 |
| 7175713 | Apparatus for cyclical deposition of thin films | Randhir P. S. Thakur, Ming Xi, Walter Glenn, Ahmad Khan, Ayad A. Al-Shaikh +2 more | 2007-02-13 |
| 7128806 | Mask etch processing apparatus | Khiem K. Nguyen, Peter Satitpunwaycha | 2006-10-31 |
| 7115494 | Method and system for controlling the presence of fluorine in refractory metal layers | Ashok Sinha, Ming Xi, Moris Kori, Jeong Soo Byun, Lawrence Chung-Lai Lei +1 more | 2006-10-03 |
| 7101795 | Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer | Ming Xi, Ashok Sinha, Moris Kori, Xinliang Lu, Ken Kaung Lai +1 more | 2006-09-05 |
| 7085616 | Atomic layer deposition apparatus | Barry Chin, Lawrence Chung-Lai Lei, Ming Xi, Hua Chung, Ken Kaung Lai +1 more | 2006-08-01 |
| 7033922 | Method and system for controlling the presence of fluorine in refractory metal layers | Moris Kori, Jeong Soo Byun, Lawrence Chung-Lai Lei, Hua Chung, Ashok Sinha +1 more | 2006-04-25 |
| 6939804 | Formation of composite tungsten films | Ken Kaung Lai, Jeong Soo Byun, Frederick Wu, Ramanujapuran A. Srinivas, Avgerinos V. Gelatos +7 more | 2005-09-06 |
| 6872429 | Deposition of tungsten nitride using plasma pretreatment in a chemical vapor deposition chamber | Ling Chen, Seshadri Ganguli | 2005-03-29 |
| 6866746 | Clamshell and small volume chamber with fixed substrate support | Lawrence Chung-Lai Lei, Gwo-Chuan Tzu, Avi Tepman, Ming Xi, Walter Glenn | 2005-03-15 |
| 6855368 | Method and system for controlling the presence of fluorine in refractory metal layers | Moris Kori, Jeong Soo Byun, Lawrence Chung-Lai Lei, Hua Chung | 2005-02-15 |
| 6849545 | System and method to form a composite film stack utilizing sequential deposition techniques | Mei Chang, Jeong Soo Byun, Hua Chung, Ashok Sinha, Moris Kori | 2005-02-01 |
| 6831004 | Formation of boride barrier layers using chemisorption techniques | Jeong Soo Byun | 2004-12-14 |
| 6620723 | Formation of boride barrier layers using chemisorption techniques | Jeong Soo Byun | 2003-09-16 |
| 6551929 | Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques | Moris Kori, Jeong Soo Byun, Lawrence Chung-Lai Lei, Hua Chung, Ashok Sinha +1 more | 2003-04-22 |
| 6402806 | Method for unreacted precursor conversion and effluent removal | John V. Schmitt, Ling Chen, George Michael Bleyle, Yu D. Cong, Mei Chang | 2002-06-11 |
| 6355106 | Deposition of copper with increased adhesion | Bo Zheng, Ling Chen, Mei Chang | 2002-03-12 |
| 6309713 | Deposition of tungsten nitride by plasma enhanced chemical vapor deposition | Ling Chen, David Charles Smith, Mei Chang, Steve Ghanayem | 2001-10-30 |
| 6251190 | Gate electrode connection structure by in situ chemical vapor deposition of tungsten and tungsten nitride | Kevin Lai, Cissy Leung, Steve Ghanayem, Thomas Wendling, Ping Jian | 2001-06-26 |
| 6206967 | Low resistivity W using B2H6 nucleation step | Kevin Lai, Cissy Leung, Dennis Sauvage | 2001-03-27 |
| 6171661 | Deposition of copper with increased adhesion | Bo Zheng, Ling Chen, Mei Chang | 2001-01-09 |
| 6162715 | Method of forming gate electrode connection structure by in situ chemical vapor deposition of tungsten and tungsten nitride | Kevin Lai, Cissy Leung, Steve Ghanayem, Thomas Wendling, Ping Jian | 2000-12-19 |
| 6099649 | Chemical vapor deposition hot-trap for unreacted precursor conversion and effluent removal | John V. Schmitt, Ling Chen, George Michael Bleyle, Yu D. Cong, Mei Chang | 2000-08-08 |
| 6099904 | Low resistivity W using B.sub.2 H.sub.6 nucleation step | Kevin Lai, Cissy Leung, Dennis Sauvage | 2000-08-08 |