Issued Patents All Time
Showing 26–50 of 75 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9165998 | Adhesion layer to minimize dielectric constant increase with good adhesion strength in a PECVD process | Kang Sub Yim, Pendar Ardalan, Sure Ngo | 2015-10-20 |
| 9123532 | Low-k dielectric damage repair by vapor-phase chemical exposure | Kelvin Chan | 2015-09-01 |
| 9058980 | UV-assisted photochemical vapor deposition for damaged low K films pore sealing | Bo Xie, Kelvin Chan | 2015-06-16 |
| 8993444 | Method to reduce dielectric constant of a porous low-k film | Kelvin Chan, Jin Xu, Kang Sub Yim | 2015-03-31 |
| 8911553 | Quartz showerhead for nanocure UV chamber | Sanjeev Baluja, Juan Carlos Rocha-Alvarez, Thomas Nowak, Jianhua Zhou | 2014-12-16 |
| 8877659 | Low-k dielectric damage repair by vapor-phase chemical exposure | Kelvin Chan | 2014-11-04 |
| 8753449 | Enhancement in UV curing efficiency using oxygen-doped purge for ultra low-K dielectric film | Mahendra CHHABRA, Scott A. Hendrickson, Sanjeev Baluja, Tsutomu Kiyohara, Juan Carlos Rocha-Alvarez | 2014-06-17 |
| 8702870 | Superimposition of rapid periodic and extensive post multiple substrate UV-ozone clean sequences for high throughput and stable substrate to substrate performance | Sang In Yi, Kelvin Chan, Thomas Nowak | 2014-04-22 |
| 8664061 | Pulse method of oxidizing sidewall dielectrics for high capacitance applications | Bo Xie, Juan Carlos Rocha-Alvarez, Sanjeev Baluja | 2014-03-04 |
| 8657961 | Method for UV based silylation chamber clean | Bo Xie, Scott A. Hendrickson, Sanjeev Baluja, Juan Carlos Rocha-Alvarez | 2014-02-25 |
| 8492170 | UV assisted silylation for recovery and pore sealing of damaged low K films | Bo Xie, Kang Sub Yim, Thomas Nowak, Kelvin Chan | 2013-07-23 |
| 8481422 | Prevention and reduction of solvent and solution penetration into porous dielectrics using a thin barrier layer | Kelvin Chan, Khaled A. Elsheref, Mei-Yee Shek, Lipan Li, Li-Qun Xia +1 more | 2013-07-09 |
| 8455849 | Method and apparatus for modulating wafer treatment profile in UV chamber | Sanjeev Baluja, Juan Carlos Rocha-Alvarez | 2013-06-04 |
| 8389376 | Air gap integration scheme | Li-Qun Xia, Bok Hoen Kim, Derek R. Witty, Hichem M'Saad | 2013-03-05 |
| 8349746 | Microelectronic structure including a low k dielectric and a method of controlling carbon distribution in the structure | Bo Xie, Daemian Raj, Sure Ngo, Kang Sub Yim | 2013-01-08 |
| 8236684 | Prevention and reduction of solvent and solution penetration into porous dielectrics using a thin barrier layer | Kelvin Chan, Khaled A. Elsheref, Meiyee Shek, Lipan Li, Li-Qun Xia +1 more | 2012-08-07 |
| 8216861 | Dielectric recovery of plasma damaged low-k films by UV-assisted photochemical deposition | Kang Sub Yim, Thomas Nowak, Bo Xie | 2012-07-10 |
| 8058183 | Restoring low dielectric constant film properties | Zhenjiang Cui, May Yu, Mehul Naik | 2011-11-15 |
| 7998536 | Silicon precursors to make ultra low-K films of K<2.2 with high mechanical properties by plasma enhanced chemical vapor deposition | Kang Sub Yim | 2011-08-16 |
| 7989033 | Silicon precursors to make ultra low-K films with high mechanical properties by plasma enhanced chemical vapor deposition | Kang Sub Yim | 2011-08-02 |
| 7947611 | Method of improving initiation layer for low-k dielectric film by digital liquid flow meter | Dustin W. Ho, Juan Carlos Rocha-Alvarez, Kelvin Chan, Nagarajan Rajagopalan, Visweswaren Sivaramakrishnan | 2011-05-24 |
| 7879683 | Methods and apparatus of creating airgap in dielectric layers for the reduction of RC delay | Amir Al-Bayati, Kang Sub Yim, Mehul Naik, Zhenjiang Cui, Mihaela Balseanu +2 more | 2011-02-01 |
| 7790583 | Clean process for an electron beam source | Khaled A. Elsheref, Josphine J. Chang, Hichem M'Saad | 2010-09-07 |
| 7777197 | Vacuum reaction chamber with x-lamp heater | Amir Al-Bayati, Lester D'Cruz, Dale R. DuBois, Khaled A. Elsheref, Naoyuki Iwasaki +4 more | 2010-08-17 |
| 7670924 | Air gap integration scheme | Li-Qun Xia, Bok Hoen Kim, Derek R. Witty, Hichem M'Saad | 2010-03-02 |