| 10840373 |
Integration of input/output device in vertical field-effect transistor technology |
Xuefeng Liu, Brent A. Anderson, Terence B. Hook, Gauri Karve |
2020-11-17 |
$2,639,000 |
| 10840147 |
Fin cut forming single and double diffusion breaks |
Juntao Li, Kangguo Cheng, Ruilong Xie |
2020-11-17 |
$2,639,000 |
| 10833180 |
Self-aligned tunneling field effect transistors |
Yi Song, Chi-Chun Liu, Liying Jiang |
2020-11-10 |
$848,000 |
| 10832975 |
Reduced static random access memory (SRAM) device foot print through controlled bottom source/drain placement |
Ruqiang Bao, Brent A. Anderson, Kangguo Cheng, Choonghyun Lee, Hemanth Jagannathan |
2020-11-10 |
$848,000 |
| 10833149 |
Capacitors |
Veeraraghavan S. Basker, Kangguo Cheng, Christopher J. Penny, Theodorus E. Standaert |
2020-11-10 |
$848,000 |
| 10833147 |
Metal-insulator-metal capacitor structure |
Veeraraghavan S. Basker, Kangguo Cheng, Theodoras E. Standaert |
2020-11-10 |
$848,000 |
| 10833155 |
Vertical field effect transistor with top and bottom airgap spacers |
Chun-Chen Yeh, Veeraraghavan S. Basker, Alexander Reznicek |
2020-11-10 |
$848,000 |
| 10833204 |
Multiple width nanosheet devices |
Kangguo Cheng, Lawrence A. Clevenger, Carl Radens, John H. Zhang |
2020-11-10 |
$848,000 |
| 10825891 |
Metal-insulator-metal capacitor structure |
Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert |
2020-11-03 |
$4,313,000 |
| 10825890 |
Metal-insulator-metal capacitor structure |
Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert |
2020-11-03 |
$4,313,000 |
| 10811508 |
Vertical transistors having multiple gate thicknesses for optimizing performance and device density |
Brent A. Anderson, Fee Li Lie, Stuart A. Sieg |
2020-10-20 |
$3,651,000 |
| 10811528 |
Two step fin etch and reveal for VTFETs and high breakdown LDVTFETs |
Mona A. Ebrish, Xuefeng Liu, Brent A. Anderson, Huiming Bu |
2020-10-20 |
$3,651,000 |
| 10811507 |
Vertical transistors having multiple gate thicknesses for optimizing performance and device density |
Brent A. Anderson, Fee Li Lie, Stuart A. Sieg |
2020-10-20 |
$3,651,000 |
| 10804368 |
Semiconductor device having two-part spacer |
Ruqiang Bao, Dechao Guo, Heng Wu, Ernest Y. Wu |
2020-10-13 |
$4,674,000 |
| 10797163 |
Leakage control for gate-all-around field-effect transistor devices |
Lan Yu, Heng Wu, Ruqiang Bao, Dechao Guo |
2020-10-06 |
$5,751,000 |
| 10784159 |
Semiconductor device and method of forming the semiconductor device |
Lawrence A. Clevenger, Baozhen Li, Kirk D. Peterson, John E. Sheets, II, Chih-Chao Yang |
2020-09-22 |
$3,040,000 |
| 10777469 |
Self-aligned top spacers for vertical FETs with in situ solid state doping |
Ruqiang Bao, Brent A. Anderson, Xin Miao |
2020-09-15 |
$3,481,000 |
| 10755985 |
Gate metal patterning for tight pitch applications |
Shogo Mochizuki, Alexander Reznicek, Joshua M. Rubin |
2020-08-25 |
$2,454,000 |
| 10741544 |
Integration of electrostatic discharge protection into vertical fin technology |
Brent A. Anderson, Huiming Bu, Terence B. Hook, Xuefeng Liu |
2020-08-11 |
$2,122,000 |
| 10734504 |
Integration of strained silicon germanium PFET device and silicon NFET device for finFET structures |
Bruce B. Doris, Hong He, Nicolas Loubet |
2020-08-04 |
$3,150,000 |
| 10734372 |
Vertical transport static random-access memory cells with transistors of active regions arranged in linear rows |
Brent A. Anderson, Stuart A. Sieg |
2020-08-04 |
$3,150,000 |
| 10734289 |
Method for forming strained fin channel devices |
Kangguo Cheng, Lawrence A. Clevenger, Carl Radens, John H. Zhang |
2020-08-04 |
$3,150,000 |
| 10714596 |
Directional deposition of protection layer |
Hong He, Juntao Li, Chih-Chao Yang |
2020-07-14 |
$4,158,000 |
| 10707128 |
Fabrication of self-aligned gate contacts and source/drain contacts directly above gate electrodes and source/drains |
Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert |
2020-07-07 |
$3,757,000 |
| 10699962 |
FinFET devices |
Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert |
2020-06-30 |
$17,326,000 |
