JZ

John H. Zhang

SS Stmicroelectronics Sa: 14 patents #1 of 124Top 1%
IBM: 7 patents #779 of 11,274Top 7%
Globalfoundries: 3 patents #83 of 583Top 15%
TE Tessera: 1 patents #44 of 99Top 45%
📍 Altamont, NY: #1 of 10 inventorsTop 10%
🗺 New York: #71 of 13,306 inventorsTop 1%
Overall (2020): #1,537 of 565,922Top 1%
23
Patents 2020

Issued Patents 2020

Showing 1–23 of 23 patents

Patent #TitleCo-InventorsDate
10861984 Integrated cantilever switch Qing Liu 2020-12-08
10833204 Multiple width nanosheet devices Kangguo Cheng, Lawrence A. Clevenger, Carl Radens, Junli Wang 2020-11-10
10816729 Hybrid photonic and electronic integrated circuits 2020-10-27
10804377 SOI FinFET transistor with strained channel 2020-10-13
10741698 Semi-floating gate FET Qing Liu 2020-08-11
10741449 Stacked transistors with different channel widths Kangguo Cheng, Lawrence A. Clevenger, Balasubramanian Pranatharthiharan 2020-08-11
10734289 Method for forming strained fin channel devices Kangguo Cheng, Junli Wang, Lawrence A. Clevenger, Carl Radens 2020-08-04
10700214 Overturned thin film device with self-aligned gate and source/drain (S/D) contacts Lawrence A. Clevenger, Carl Radens, Yiheng Xu 2020-06-30
10700194 Vertical tunneling FinFET Qing Liu 2020-06-30
10680112 Gate all around vacuum channel transistor 2020-06-09
10658459 Nanosheet transistor with robust source/drain isolation from substrate Robin Hsin Kuo Chao, Kangguo Cheng, Cheng Chi, Ruilong Xie 2020-05-19
10651293 Methods of simultaneously forming bottom and top spacers on a vertical transistor device 2020-05-12
10627720 Overlay mark structures Lei Sun, Shao Beng Law, Guoxiang Ning, Xunyuan Zhang, Ruilong Xie 2020-04-21
10629538 Modular interconnects for gate-all-around transistors 2020-04-21
10615177 Method for manufacturing a transistor having a sharp junction by forming raised source-drain regions before forming gate regions and corresponding transistor produced by said method 2020-04-07
10615125 Device and method for alignment of vertically stacked wafers and die Walter Kleemeier, Paul Ferreira, Ronald K. Sampson 2020-04-07
10600638 Nanosheet transistors with sharp junctions Kangguo Cheng, Lawrence A. Clevenger, Balasubramanian S. Pranatharthi Haran 2020-03-24
10586860 Method of manufacturing finfet devices using narrow and wide gate cut openings in conjunction with a replacement metal gate process Jiehui Shu, Laertis Economikos, Xusheng Wu, Haigou Huang, Hui Zhan +4 more 2020-03-10
10586741 Gate height and spacer uniformity Kangguo Cheng, Lawrence A. Clevenger, Balasubramanian S. Pranatharthi Haran 2020-03-10
10573756 Transistors incorporating metal quantum dots into doped source and drain regions 2020-02-25
10553497 Methods and devices for enhancing mobility of charge carriers Chengyu Niu, Heng Yang 2020-02-04
10546789 Methods of forming metal-gate semiconductor devices with enhanced mobility of charge carriers Chengyu Niu, Heng Yang 2020-01-28
10546743 Advanced interconnect with air gap Yann Mignot, Lawrence A. Clevenger, Carl Radens, Richard S. Wise, Yiheng Xu +2 more 2020-01-28