| 10832943 |
Gate contact over active region with self-aligned source/drain contact |
Su Chen Fan, Kangguo Cheng, Ruilong Xie |
2020-11-10 |
| 10763342 |
Semiconductor devices having equal thickness gate spacers |
Ruilong Xie |
2020-09-01 |
| 10727308 |
Gate contact structure for a transistor |
Ruilong Xie, Hao Tang, Daniel Chanemougame, Lars Liebmann, Mark V. Raymond |
2020-07-28 |
| 10665586 |
Method of concurrently forming source/drain and gate contacts and related device |
Ruilong Xie |
2020-05-26 |
| 10658459 |
Nanosheet transistor with robust source/drain isolation from substrate |
Robin Hsin Kuo Chao, Kangguo Cheng, Ruilong Xie, John H. Zhang |
2020-05-19 |
| 10622475 |
Uniform bottom spacer for VFET devices |
Steven R. Bentley, Chanro Park, Ruilong Xie, Tenko Yamashita |
2020-04-14 |
| 10593782 |
Self-aligned finFET formation |
Fee Li Lie, Chi-Chun Liu, Ruilong Xie |
2020-03-17 |
