Issued Patents 2020
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10804410 | Bottom channel isolation in nanosheet transistors | Choonghyun Lee, Chun Wing Yeung, Jingyun Zhang | 2020-10-13 |
| 10756178 | Self-limiting and confining epitaxial nucleation | Kangguo Cheng, Nicolas Loubet | 2020-08-25 |
| 10756177 | Self-limiting and confining epitaxial nucleation | Kangguo Cheng, Nicolas Loubet | 2020-08-25 |
| 10741639 | Formation of dielectric layer as etch-stop for source and drain epitaxy disconnection | Nicolas Loubet, Julien Frougier, Ruilong Xie | 2020-08-11 |
| 10692203 | Measuring defectivity by equipping model-less scatterometry with cognitive machine learning | Dexin Kong, Huai Huang | 2020-06-23 |
| 10658459 | Nanosheet transistor with robust source/drain isolation from substrate | Kangguo Cheng, Cheng Chi, Ruilong Xie, John H. Zhang | 2020-05-19 |
| 10636694 | Dielectric isolation in gate-all-around devices | Kangguo Cheng, Nicolas Loubet, Pietro Montanini, Ruilong Xie | 2020-04-28 |
| 10553723 | Method for forming doped extension regions in a structure having superimposed nanowires | Remi Coquand, Nicolas Loubet, Shay Reboh | 2020-02-04 |
| 10541239 | Semiconductor device and method of forming the semiconductor device | Hemanth Jagannathan, Choonghyun Lee, Chun Wing Yeung, Jingyun Zhang | 2020-01-21 |
| 10529850 | Vertical field-effect transistor including a fin having sidewalls with a tapered bottom profile | Chun Wing Yeung, Choonghyun Lee, Jingyun Zhang, Heng Wu | 2020-01-07 |