| 10840349 |
Formation of air gap spacers for reducing parasitic capacitance |
Kangguo Cheng, Peng Xu, Choonghyun Lee |
2020-11-17 |
| 10833081 |
Forming isolated contacts in a stacked vertical transport field effect transistor (VTFET) |
Chen Zhang, Joshua M. Rubin, Tenko Yamashita |
2020-11-10 |
| 10833079 |
Dual transport orientation for stacked vertical transport field-effect transistors |
Tenko Yamashita, Chen Zhang, Kangguo Cheng |
2020-11-10 |
| 10811322 |
Different gate widths for upper and lower transistors in a stacked vertical transport field-effect transistor structure |
Kangguo Cheng, Chen Zhang, Tenko Yamashita |
2020-10-20 |
| 10804368 |
Semiconductor device having two-part spacer |
Ruqiang Bao, Junli Wang, Dechao Guo, Ernest Y. Wu |
2020-10-13 |
| 10797163 |
Leakage control for gate-all-around field-effect transistor devices |
Lan Yu, Ruqiang Bao, Junli Wang, Dechao Guo |
2020-10-06 |
| 10777647 |
Fin-type FET with low source or drain contact resistance |
Kangguo Cheng, Juntao Li, Peng Xu |
2020-09-15 |
| 10727323 |
Three-dimensional (3D) tunneling field-effect transistor (FET) |
Juntao Li, Kangguo Cheng, Peng Xu |
2020-07-28 |
| 10727315 |
Nanosheet transistor |
Kangguo Cheng, Juntao Li, Peng Xu |
2020-07-28 |
| 10699959 |
Integrating metal-insulator-metal capacitors with fabrication of vertical field effect transistors |
Kangguo Cheng, Xuefeng Liu, Peng Xu |
2020-06-30 |
| 10692772 |
Integrating metal-insulator-metal capacitors with fabrication of vertical field effect transistors |
Kangguo Cheng, Xuefeng Liu, Peng Xu |
2020-06-23 |
| 10693007 |
Wrapped contacts with enhanced area |
Kangguo Cheng, Zuoguang Liu, Peng Xu |
2020-06-23 |
| 10692778 |
Gate-all-around FETs having uniform threshold voltage |
Ruqiang Bao, Dechao Guo, Junli Wang |
2020-06-23 |
| 10608096 |
Formation of air gap spacers for reducing parasitic capacitance |
Kangguo Cheng, Peng Xu, Choonghyun Lee |
2020-03-31 |
| 10573561 |
Formation of stacked nanosheet semiconductor devices |
Kangguo Cheng, Juntao Li, Peng Xu |
2020-02-25 |
| 10564125 |
Self-aligned nanotips with tapered vertical sidewalls |
Juntao Li, Kangguo Cheng, Peng Xu |
2020-02-18 |
| 10566246 |
Shared contact trench comprising dual silicide layers and dual epitaxial layers for source/drain layers of NFET and PFET devices |
Kangguo Cheng, Junli Wang, Zuoguang Liu |
2020-02-18 |
| 10559491 |
Fabrication of vertical transport fin field effect transistors with a self-aligned separator and an isolation region with an air gap |
Kangguo Cheng, Zuoguang Liu, Sebastian Naczas, Peng Xu |
2020-02-11 |
| 10529850 |
Vertical field-effect transistor including a fin having sidewalls with a tapered bottom profile |
Chun Wing Yeung, Choonghyun Lee, Jingyun Zhang, Robin Hsin Kuo Chao |
2020-01-07 |
