| 10880817 |
Wi-fi configuration method, Wi-Fi mobile terminal, and Wi-Fi device |
Shunbao Wang, Jianfeng Xu |
2020-12-29 |
|
| D904724 |
Safe |
— |
2020-12-08 |
|
| 10860944 |
Phase shifter, quantum logic gate apparatus, optical quantum computing apparatus, and phase shift method |
Wen Zhang |
2020-12-08 |
|
| 10863188 |
Method and apparatus for non-uniform mapping for quantization matrix coefficients between different sizes of quantization matrices in image/video coding |
Jianhua Zheng |
2020-12-08 |
|
| D903508 |
Watch case |
— |
2020-12-01 |
|
| 10833073 |
Vertical transistors with different gate lengths |
Xin Miao, Kangguo Cheng, Juntao Li |
2020-11-10 |
$848,000 |
| 10833081 |
Forming isolated contacts in a stacked vertical transport field effect transistor (VTFET) |
Heng Wu, Joshua M. Rubin, Tenko Yamashita |
2020-11-10 |
$848,000 |
| 10833158 |
III-V segmented finFET free of wafer bonding |
Xin Miao, Kangguo Cheng, Wenyu Xu |
2020-11-10 |
$848,000 |
| 10833157 |
iFinFET |
Juntao Li, Kangguo Cheng, Xin Miao |
2020-11-10 |
$848,000 |
| 10833079 |
Dual transport orientation for stacked vertical transport field-effect transistors |
Tenko Yamashita, Kangguo Cheng, Heng Wu |
2020-11-10 |
$848,000 |
| 10833069 |
Logic gate designs for 3D monolithic direct stacked VTFET |
Tenko Yamashita, Terence B. Hook |
2020-11-10 |
$848,000 |
| 10833176 |
Selectively formed gate sidewall spacer |
Kangguo Cheng, Xin Miao, Wenyu Xu |
2020-11-10 |
$848,000 |
| 10811322 |
Different gate widths for upper and lower transistors in a stacked vertical transport field-effect transistor structure |
Heng Wu, Kangguo Cheng, Tenko Yamashita |
2020-10-20 |
$3,651,000 |
| 10811495 |
Vertical field effect transistor with uniform gate length |
Kangguo Cheng, Xin Miao, Wenyu Xu |
2020-10-20 |
$3,651,000 |
| 10796966 |
Vertical FET with various gate lengths by an oxidation process |
Xin Miao, Kangguo Cheng |
2020-10-06 |
$5,751,000 |
| 10796967 |
Vertical field effect transistor (FET) with controllable gate length |
Kangguo Cheng, Xin Miao, Wenyu Xu |
2020-10-06 |
$5,751,000 |
| 10790271 |
Perpendicular stacked field-effect transistor device |
Zheng Xu, Ruqiang Bao, Dongbing Shao |
2020-09-29 |
$6,035,000 |
| 10784364 |
Nanosheet with changing SiGe pecentage for SiGe lateral recess |
Kangguo Cheng, Xin Miao, Wenyu Xu |
2020-09-22 |
$3,040,000 |
| 10777468 |
Stacked vertical field-effect transistors with sacrificial layer patterning |
Tenko Yamashita, Kangguo Cheng, Oleg Gluschenkov |
2020-09-15 |
$3,481,000 |
| 10763327 |
Nanosheet MOSFET with gate fill utilizing replacement spacer |
Chun Wing Yeung |
2020-09-01 |
$3,521,000 |
| 10764577 |
Non-MPM mode coding for intra prediction in video coding |
Minqiang Jiang, Taru Kanchan, Jianhua Zheng, Nam Ling |
2020-09-01 |
|
| 10756205 |
Double gate two-dimensional material transistor |
Peng Xu, Chun Wing Yeung |
2020-08-25 |
$2,454,000 |
| 10741557 |
Hybrid high mobility channel transistors |
Xin Miao, Kangguo Cheng, Wenyu Xu |
2020-08-11 |
$2,122,000 |
| 10741681 |
Increased source and drain contact edge width in two-dimensional material field effect transistors by directed self-assembly |
Chi-Chun Liu, Chun Wing Yeung |
2020-08-11 |
$2,122,000 |
| 10734502 |
Prevention of extension narrowing in nanosheet field effect transistors |
Tenko Yamashita, Chun Wing Yeung |
2020-08-04 |
$3,150,000 |
