Issued Patents 2020
Showing 51–75 of 75 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10607892 | Junction formation in thick-oxide and thin-oxide vertical FETs on the same chip | Xin Miao, Kangguo Cheng, Wenyu Xu | 2020-03-31 |
| 10600886 | Vertical field effect transistors with bottom source/drain epitaxy | Kangguo Cheng, Xin Miao, Wenyu Xu | 2020-03-24 |
| 10602294 | Processing object-based audio signals | Alan J. Seefeldt, Lie Lu | 2020-03-24 |
| 10600917 | Field effect transistor and manufacturing method thereof | Xudong Qin, Huilong Xu | 2020-03-24 |
| 10600887 | Approach to high-k dielectric feature uniformity | Tenko Yamashita, Chun Wing Yeung | 2020-03-24 |
| 10600881 | Tunneling field-effect transistor and fabrication method thereof | Xichao Yang | 2020-03-24 |
| 10592698 | Analog-based multiple-bit chip security | Kangguo Cheng, Xin Miao, Wenyu Xu | 2020-03-17 |
| 10593753 | Vertical field effect transistor (VFET) device with controllable top spacer | Wenyu Xu, Kangguo Cheng, Xin Miao | 2020-03-17 |
| 10593598 | Vertical FET with various gate lengths by an oxidation process | Xin Miao, Kangguo Cheng | 2020-03-17 |
| 10587900 | Systems, methods, and devices for image coding | Minqiang Jiang, Jianhua Zheng, Madhusudan Kalluri, Nam Ling | 2020-03-10 |
| 10580770 | Vertical transistors with different gate lengths | Xin Miao, Kangguo Cheng, Juntao Li | 2020-03-03 |
| 10580886 | Increased source and drain contact edge width in two-dimensional material field effect transistors by directed self-assembly | Chi-Chun Liu, Chun Wing Yeung | 2020-03-03 |
| 10580709 | Flipped vertical field-effect-transistor | Kangguo Cheng, Xin Miao, Wenyu Xu | 2020-03-03 |
| 10566445 | Gate spacer and inner spacer formation for nanosheet transistors having relatively small space between gates | Zhenxing Bi, Kangguo Cheng, Nicolas Loubet, Xin Miao, Wenyu Xu | 2020-02-18 |
| 10566444 | Vertical fin field effect transistor with a reduced gate-to-bottom source/drain parasitic capacitance | Kangguo Cheng, Xin Miao, Wenyu Xu | 2020-02-18 |
| 10559504 | High mobility semiconductor fins on insulator | Kangguo Cheng, Xin Miao, Wenyu Xu | 2020-02-11 |
| 10559502 | Fabrication of a pair of vertical fin field effect transistors having a merged top source/drain | Kangguo Cheng, Xin Miao, Wenyu Xu | 2020-02-11 |
| 10553493 | Fabrication of a vertical transistor with self-aligned bottom source/drain | Kangguo Cheng, Xin Miao, Wenyu Xu | 2020-02-04 |
| 10554967 | Illumination compensation (IC) refinement based on positional pairings among pixels | Zhouye Gu, Jianhua Zheng, Nam Ling | 2020-02-04 |
| 10546957 | Nanosheet FET including all-around source/drain contact | Peng Xu, Chun Wing Yeung | 2020-01-28 |
| 10541318 | Prevention of extension narrowing in nanosheet field effect transistors | Tenko Yamashita, Chun Wing Yeung | 2020-01-21 |
| 10541330 | Forming stacked nanowire semiconductor device | Kangguo Cheng, Xin Miao, Peng Xu | 2020-01-21 |
| 10535652 | Fabrication of vertical fin field effect transistors having top air spacers and a self-aligned top junction | Kangguo Cheng, Xin Miao, Wenyu Xu | 2020-01-14 |
| 10529823 | Method of manufacturing a semiconductor device having a metal gate with different lateral widths between spacers | Xin Miao, Kangguo Cheng, Wenyu Xu | 2020-01-07 |
| 10529713 | Fin field effect transistor devices with modified spacer and gate dielectric thicknesses | Xin Miao, Kangguo Cheng, Wenyu Xu | 2020-01-07 |