Issued Patents 2020
Showing 1–25 of 37 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10833158 | III-V segmented finFET free of wafer bonding | Xin Miao, Chen Zhang, Kangguo Cheng | 2020-11-10 |
| 10833176 | Selectively formed gate sidewall spacer | Kangguo Cheng, Xin Miao, Chen Zhang | 2020-11-10 |
| 10811495 | Vertical field effect transistor with uniform gate length | Kangguo Cheng, Xin Miao, Chen Zhang | 2020-10-20 |
| 10796967 | Vertical field effect transistor (FET) with controllable gate length | Kangguo Cheng, Xin Miao, Chen Zhang | 2020-10-06 |
| 10784364 | Nanosheet with changing SiGe pecentage for SiGe lateral recess | Kangguo Cheng, Xin Miao, Chen Zhang | 2020-09-22 |
| 10741557 | Hybrid high mobility channel transistors | Xin Miao, Chen Zhang, Kangguo Cheng | 2020-08-11 |
| 10734501 | Metal gate structure having gate metal layer with a top portion width smaller than a bottom portion width to reduce transistor gate resistance | Xin Miao, Kangguo Cheng, Chen Zhang | 2020-08-04 |
| 10734287 | Fabrication of a pair of vertical fin field effect transistors having a merged top source/drain | Kangguo Cheng, Xin Miao, Chen Zhang | 2020-08-04 |
| 10672888 | Vertical transistors having improved gate length control | Kangguo Cheng, Xin Miao, Chen Zhang | 2020-06-02 |
| 10665694 | Vertical transistors having improved gate length control | Kangguo Cheng, Xin Miao, Chen Zhang | 2020-05-26 |
| 10665666 | Method of forming III-V on insulator structure on semiconductor substrate | Kangguo Cheng, Xin Miao, Chen Zhang | 2020-05-26 |
| 10658493 | Gate spacer and inner spacer formation for nanosheet transistors having relatively small space between gates | Zhenxing Bi, Kangguo Cheng, Nicolas Loubet, Xin Miao, Chen Zhang | 2020-05-19 |
| 10644150 | Tunnel field-effect transistor with reduced subthreshold swing | Xin Miao, Chen Zhang, Kangguo Cheng | 2020-05-05 |
| 10636895 | Vertical transport field effect transistor on silicon with defined junctions | Chen Zhang, Kangguo Cheng, Xin Miao | 2020-04-28 |
| 10617893 | Beam shaping assembly for neutron capture therapy | Yuan-Hao Liu, Wei-Lin Chen, Pei-Yi Lee, Ming-Chuan Chang | 2020-04-14 |
| 10622454 | Formation of a semiconductor device with RIE-free spacers | Kangguo Cheng, Xin Miao, Chen Zhang | 2020-04-14 |
| 10622264 | Nanosheet devices with different types of work function metals | Kangguo Cheng, Xin Miao, Chen Zhang | 2020-04-14 |
| 10622354 | FinFETs with controllable and adjustable channel doping | Kangguo Cheng, Xin Miao, Chen Zhang | 2020-04-14 |
| 10615267 | Semiconductor device strain relaxation buffer layer | Kangguo Cheng, Xin Miao, Chen Zhang | 2020-04-07 |
| 10615256 | Nanosheet transistor gate structure having reduced parasitic capacitance | Kangguo Cheng, Xin Miao, Chen Zhang | 2020-04-07 |
| 10615258 | Nanosheet semiconductor structure with inner spacer formed by oxidation | Xin Miao, Kangguo Cheng, Chen Zhang | 2020-04-07 |
| 10608083 | Non-planar field effect transistor devices with low-resistance metallic gate structures | Kangguo Cheng, Chen Zhang, Xin Miao | 2020-03-31 |
| 10607894 | Fabrication of a pair of vertical fin field effect transistors having a merged top source/drain | Kangguo Cheng, Xin Miao, Chen Zhang | 2020-03-31 |
| 10607892 | Junction formation in thick-oxide and thin-oxide vertical FETs on the same chip | Xin Miao, Kangguo Cheng, Chen Zhang | 2020-03-31 |
| 10600886 | Vertical field effect transistors with bottom source/drain epitaxy | Kangguo Cheng, Xin Miao, Chen Zhang | 2020-03-24 |