Issued Patents 2020
Showing 1–25 of 41 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10872962 | Steep-switch field effect transistor with integrated bi-stable resistive system | Julien Frougier, Ruilong Xie, Daniel Chanemougame, Ali Razavieh, Kangguo Cheng | 2020-12-22 |
| 10854750 | Semiconductor device with fin and related methods | Pierre Morin | 2020-12-01 |
| 10854606 | Method to induce strain in finFET channels from an adjacent region | Pierre Morin | 2020-12-01 |
| 10847654 | Method to induce strain in 3-D microfabricated structures | Pierre Morin | 2020-11-24 |
| 10832964 | Replacement contact formation for gate contact over active region with selective metal growth | Ruilong Xie, Balasubramanian Pranatharthiharan, Chanro Park | 2020-11-10 |
| 10818775 | Method for fabricating a field-effect transistor | Shay Reboh, Emmanuel Augendre, Remi Coquand | 2020-10-27 |
| 10818776 | Nanosheet transistor with optimized junction and cladding detectivity control | Kangguo Cheng, Ruilong Xie, Tenko Yamashita, Chun-Chen Yeh | 2020-10-27 |
| 10818751 | Nanosheet transistor barrier for electrically isolating the substrate from the source or drain regions | Mona A. Ebrish, Fee Li Lie, Gauri Karve, Indira Seshadri, Lawrence A. Clevenger +1 more | 2020-10-27 |
| 10756177 | Self-limiting and confining epitaxial nucleation | Robin Hsin Kuo Chao, Kangguo Cheng | 2020-08-25 |
| 10756203 | Sub-thermal switching slope vertical field effect transistor with dual-gate feedback loop mechanism | Julien Frougier, Ruilong Xie, Steven R. Bentley, Kangguo Cheng, Pietro Montanini | 2020-08-25 |
| 10756178 | Self-limiting and confining epitaxial nucleation | Robin Hsin Kuo Chao, Kangguo Cheng | 2020-08-25 |
| 10748901 | Interlayer via contacts for monolithic three-dimensional semiconductor integrated circuit devices | Joshua M. Rubin, Terence B. Hook | 2020-08-18 |
| 10741639 | Formation of dielectric layer as etch-stop for source and drain epitaxy disconnection | Robin Hsin Kuo Chao, Julien Frougier, Ruilong Xie | 2020-08-11 |
| 10741675 | Sub-thermal switching slope vertical field effect transistor with dual-gate feedback loop mechanism | Julien Frougier, Ruilong Xie, Steven R. Bentley, Kangguo Cheng, Pietro Montanini | 2020-08-11 |
| 10741660 | Nanosheet single gate (SG) and extra gate (EG) field effect transistor (FET) co-integration | Siva Kanakasabapathy, Kangguo Cheng, Jingyun Zhang | 2020-08-11 |
| 10741641 | Dielectric isolation and SiGe channel formation for integration in CMOS nanosheet channel devices | Michael A. Guillorn | 2020-08-11 |
| 10741454 | Boundary protection for CMOS multi-threshold voltage devices | Jing Guo, Ekmini Anuja De Silva, Indira Seshadri, Nelson Felix | 2020-08-11 |
| 10734504 | Integration of strained silicon germanium PFET device and silicon NFET device for finFET structures | Bruce B. Doris, Hong He, Junli Wang | 2020-08-04 |
| 10734523 | Nanosheet substrate to source/drain isolation | Fee Li Lie, Mona A. Ebrish, Ekmini Anuja De Silva, Indira Seshadri, Gauri Karve +2 more | 2020-08-04 |
| 10727320 | Method of manufacturing at least one field effect transistor having epitaxially grown electrodes | Shay Reboh, Emmanuel Augendre, Remi Coquand | 2020-07-28 |
| 10714392 | Optimizing junctions of gate all around structures with channel pull back | Emmanuel Augendre, Remi Coquand, Shay Reboh | 2020-07-14 |
| 10692985 | Protection of high-K dielectric during reliability anneal on nanosheet structures | Sanjay C. Mehta, Vijay Narayanan, Muthumanickam Sankarapandian | 2020-06-23 |
| 10665497 | Method of manufacturing a structure having one or several strained semiconducting zones that may for transistor channel regions | Emmanuel Augendre, Sylvain Maitrejean, Pierre Morin | 2020-05-26 |
| 10658493 | Gate spacer and inner spacer formation for nanosheet transistors having relatively small space between gates | Zhenxing Bi, Kangguo Cheng, Xin Miao, Wenyu Xu, Chen Zhang | 2020-05-19 |
| 10644110 | Co-integration of elastic and plastic relaxation on the same wafer | Stephen W. Bedell, Devendra K. Sadana | 2020-05-05 |