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Takashi Ando, Hiroyuki Miyazoe, Seyoung Kim |
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Nicolas Loubet, Sanjay C. Mehta, Muthumanickam Sankarapandian |
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Artificial synapse with hafnium oxide-based ferroelectric layer in CMOS front-end |
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Artificial synapse with hafnium oxide-based ferroelectric layer in CMOS front-end |
Martin M. Frank, Takashi Ando, Xiao Sun, Jin-Ping Han |
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Takashi Ando, Martin M. Frank, Renee T. Mo |
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Takashi Ando, Martin M. Frank |
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Structure and method for multiple threshold voltage definition in advanced CMOS device technology |
Hemanth Jagannathan |
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Takashi Ando, Pouya Hashemi, Hemanth Jagannathan, Choonghyun Lee |
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Martin M. Frank, Hiroyuki Miyazoe |
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Distinct gate stacks for III-V-based CMOS circuits comprising a channel cap |
Takashi Ando, Martin M. Frank, Renee T. Mo |
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Patterned gate dielectrics for III-V-based CMOS circuits |
Takashi Ando, Martin M. Frank, Renee T. Mo, John Rozen |
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Multi-metal dipole doping to offer multi-threshold voltage pairs without channel doping for highly scaling CMOS device |
Ruqiang Bao, Terence B. Hook, Hemanth Jagannathan |
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Disposable laser/flash anneal absorber for embedded neuromorphic memory device fabrication |
Kam-Leung Lee, Deborah A. Neumayer, Son V. Nguyen, Martin M. Frank |
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Formation of pure silicon oxide interfacial layer on silicon-germanium channel field effect transistor device |
Takashi Ando, Pouya Hashemi, Hemanth Jagannathan, Choonghyun Lee |
2020-01-07 |
| 10529815 |
Conformal replacement gate electrode for short channel devices |
Takashi Ando, Ruqiang Bao, Masanobu Hatanaka, Yohei Ogawa, John Rozen |
2020-01-07 |
