Issued Patents 2020
Showing 1–16 of 16 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10804410 | Bottom channel isolation in nanosheet transistors | Robin Hsin Kuo Chao, Choonghyun Lee, Jingyun Zhang | 2020-10-13 |
| 10763327 | Nanosheet MOSFET with gate fill utilizing replacement spacer | Chen Zhang | 2020-09-01 |
| 10756205 | Double gate two-dimensional material transistor | Peng Xu, Chen Zhang | 2020-08-25 |
| 10741681 | Increased source and drain contact edge width in two-dimensional material field effect transistors by directed self-assembly | Chi-Chun Liu, Chen Zhang | 2020-08-11 |
| 10734502 | Prevention of extension narrowing in nanosheet field effect transistors | Tenko Yamashita, Chen Zhang | 2020-08-04 |
| 10700195 | Reduced resistance source and drain extensions in vertical field effect transistors | Peng Xu, Chen Zhang | 2020-06-30 |
| 10658299 | Replacement metal gate processes for vertical transport field-effect transistor | Choonghyun Lee, Ruqiang Bao, Hemanth Jagannathan | 2020-05-19 |
| 10622489 | Vertical tunnel FET with self-aligned heterojunction | Choonghyun Lee, Shogo Mochizuki, Ruqiang Bao | 2020-04-14 |
| 10615278 | Preventing strained fin relaxation | Kangguo Cheng, Bruce B. Doris, Hong He, Sivananda K. Kanakasabapathy, Gauri Karve +3 more | 2020-04-07 |
| 10600887 | Approach to high-k dielectric feature uniformity | Tenko Yamashita, Chen Zhang | 2020-03-24 |
| 10580886 | Increased source and drain contact edge width in two-dimensional material field effect transistors by directed self-assembly | Chi-Chun Liu, Chen Zhang | 2020-03-03 |
| 10573567 | Sacrificial cap for forming semiconductor contact | Praneet Adusumilli, Zuoguang Liu, Shogo Mochizuki, Jie Yang | 2020-02-25 |
| 10546957 | Nanosheet FET including all-around source/drain contact | Peng Xu, Chen Zhang | 2020-01-28 |
| 10541239 | Semiconductor device and method of forming the semiconductor device | Robin Hsin Kuo Chao, Hemanth Jagannathan, Choonghyun Lee, Jingyun Zhang | 2020-01-21 |
| 10541318 | Prevention of extension narrowing in nanosheet field effect transistors | Tenko Yamashita, Chen Zhang | 2020-01-21 |
| 10529850 | Vertical field-effect transistor including a fin having sidewalls with a tapered bottom profile | Choonghyun Lee, Jingyun Zhang, Robin Hsin Kuo Chao, Heng Wu | 2020-01-07 |